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Optically enhanced N doped ZnO amorphous nanostructures grown by low cost ultrasonicated sol–gel route

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Bibliographic Details
Main Authors: Y. C. Goswami, U. P. S. Gahlaut
Other Authors: ycgoswami@gmail.com
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2022
Subjects:
ZnO
Doping
Optoelectronics devices
Semiconductors
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/76284
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spelling my.unimap-762842022-10-06T02:25:52Z Optically enhanced N doped ZnO amorphous nanostructures grown by low cost ultrasonicated sol–gel route Y. C. Goswami U. P. S. Gahlaut ycgoswami@gmail.com Nano Research Lab, ITM University Gwalior, MP India ZnO Doping Optoelectronics devices Semiconductors Link to publisher's homepage at http://ijneam.unimap.edu.my N doped ZnO amorphous nanostructures with excellent optical properties were grown by the ultrasonicated sol-gel route. The samples were characterized using structural, morphological and optical studies. XRD patterns confirmed the hexagonal wurtzite structure of ZnO. Increase in nitrogen doping results in effective structural changes like decrease in FWHM of peak (34.30), appearance of additional peaks and removal of previous peaks. The crystallite size of undoped ZnO is calculated at around 5.88 nm and decreases to 3.525 nm, 3.386 nm, and 3.008 nm respectively on gradual increase in nitrogen doping concentration in the samples B: 0.05M, C: 0.1M, and D: 0.2M respectively. The morphological pattern of these nanostructures shows that on increasing the doping of nitrogen, the roughness of the surface increases. An optical study shows that on doping of nitrogen, the bandgap decreases results in absorption shifts in the visible region. Two peaks at 480nm and 685nm are observed due to defects of ZnO surface. The addition of nitrogen generates acceptor levels near the valance band edge. The peak at 450 nm might be due to transition from the conduction band to shallow acceptor levels near the valance band. The presence of a peak near 665 nm indicates the formation of deep holes levels. Significant shift in band edge, the morphological changes and decrease in size indicates successful doping in terms of nitrogen content and homogeneity. Nitrogen doping and metal vacancies stabilize shallow acceptors levels above the valence band in ZnO, thus triggering the stabilization of a p-type conductivity as indicated in luminescence studies. 2022-10-06T02:25:52Z 2022-10-06T02:25:52Z 2022-07 Article International Journal of Nanoelectronics and Materials, vol.15(3), 2022, pages 223-240 1985-5761 (Printed) 2232-1535 (online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/76284 http://ijneam.unimap.edu.my en Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic ZnO
Doping
Optoelectronics devices
Semiconductors
spellingShingle ZnO
Doping
Optoelectronics devices
Semiconductors
Y. C. Goswami
U. P. S. Gahlaut
Optically enhanced N doped ZnO amorphous nanostructures grown by low cost ultrasonicated sol–gel route
description Link to publisher's homepage at http://ijneam.unimap.edu.my
author2 ycgoswami@gmail.com
author_facet ycgoswami@gmail.com
Y. C. Goswami
U. P. S. Gahlaut
format Article
author Y. C. Goswami
U. P. S. Gahlaut
author_sort Y. C. Goswami
title Optically enhanced N doped ZnO amorphous nanostructures grown by low cost ultrasonicated sol–gel route
title_short Optically enhanced N doped ZnO amorphous nanostructures grown by low cost ultrasonicated sol–gel route
title_full Optically enhanced N doped ZnO amorphous nanostructures grown by low cost ultrasonicated sol–gel route
title_fullStr Optically enhanced N doped ZnO amorphous nanostructures grown by low cost ultrasonicated sol–gel route
title_full_unstemmed Optically enhanced N doped ZnO amorphous nanostructures grown by low cost ultrasonicated sol–gel route
title_sort optically enhanced n doped zno amorphous nanostructures grown by low cost ultrasonicated sol–gel route
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2022
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/76284
_version_ 1751537911656873984
score 13.222552

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