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Performance improvement of optoelectronic devices using Group III Nitride based quantum dot

Doctor of Philosophy (Electrical Systems Engineering)

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Bibliographic Details
Main Author: Md. Abdullah, Al Humayun
Other Authors: Mohd Abdur, Rashid, Assoc. Prof. Dr.
Format: Thesis
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2014
Subjects:
Optoelectronic device
Quantum dot
Optoelectronic devices
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/72234
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spelling my.unimap-722342021-09-29T01:42:14Z Performance improvement of optoelectronic devices using Group III Nitride based quantum dot Md. Abdullah, Al Humayun Mohd Abdur, Rashid, Assoc. Prof. Dr. Mohd Fareq, Abd Malek, Dr. Optoelectronic device Quantum dot Optoelectronic devices Doctor of Philosophy (Electrical Systems Engineering) Quantum dot has become a subject of incredible interest in the field of semiconductor optoelectronic device design for the researchers due to some of their unique properties. Among the wide range of optoelectronic devices some important characteristics of solar cell and laser have been studied extensively. These two devices are chosen because of the importance of these optoelectronic semiconductor devices in the field of renewable energy and optical fiber communication respectively. Recently it has been acknowledged that the researchers are paying more and more attention to the group-III nitride based quantum dots. Therefore this research is devoted to investigate the performance improvement of solar cell and laser using InN based quantum dot in the active layer of the device structure. In this research work the performance improvement of both these devices have been achieved by changing the active layer material without affecting other structural parameters. The effect of lattice constant on band gap energy optimization of has been investigated initially. From the numerical analysis it has been found that offers a band gap energy ranging from 0.7eV - 3.5eV, which makes it a suitable material for solar cell to absorb a wide range of light energy. Furthermore, it has been demonstrated that In0.87Ga0.13N is capable of emitting light at the wavelength of 1.55μm, which offers the lowest attenuation for signal transmission through optical fiber. Therefore the result of initial investigation ascertains that can be a promising material for the fabrication of solar cell as well as laser. 2014 2021-09-29T01:39:10Z 2021-09-29T01:39:10Z Thesis http://dspace.unimap.edu.my:80/xmlui/handle/123456789/72234 en Universiti Malaysia Perlis (UniMAP) Universiti Malaysia Perlis (UniMAP) School of Electrical Systems Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Optoelectronic device
Quantum dot
Optoelectronic devices
spellingShingle Optoelectronic device
Quantum dot
Optoelectronic devices
Md. Abdullah, Al Humayun
Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
description Doctor of Philosophy (Electrical Systems Engineering)
author2 Mohd Abdur, Rashid, Assoc. Prof. Dr.
author_facet Mohd Abdur, Rashid, Assoc. Prof. Dr.
Md. Abdullah, Al Humayun
format Thesis
author Md. Abdullah, Al Humayun
author_sort Md. Abdullah, Al Humayun
title Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
title_short Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
title_full Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
title_fullStr Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
title_full_unstemmed Performance improvement of optoelectronic devices using Group III Nitride based quantum dot
title_sort performance improvement of optoelectronic devices using group iii nitride based quantum dot
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2014
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/72234
_version_ 1724609871808036864
score 13.222552

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