Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method
Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008 & vol. 2; issue 1 & 2, 2009.
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my.unimap-71232014-06-27T09:15:47Z Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method Naser M., Ahmed Zaliman, Sauli Uda, Hashim Yarub, Al-Douri Absorption coefficients Refractive index Optical properties III-Nitride energy band gap Optoelectronic devices Optoelectronic devices -- Design and construction Optoelectronics -- Materials Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008 & vol. 2; issue 1 & 2, 2009. The design of optoelectronic devices fabricated from III-Nitride materials is aided by knowledge of refractive index and absorption coefficient of these materials .The optical properties of Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN grown by MOVPE on sapphire were investigated by means of transmittance measurements .The optical transmission method is successfully used to determine the refractive index (n), absorption coefficient (α), film thickness and energy gap of three samples of film over the spectral range of (1-5 eV) . 2009-09-03T02:28:41Z 2009-09-03T02:28:41Z 2009 Article International Journal of Nanoelectronics and Materials, vol.2 (2), 2009, pages 189-195. 1985-5761 (Printed) 1997-4434 (Online) http://hdl.handle.net/123456789/7123 en Universiti Malaysia Perlis |
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Absorption coefficients Refractive index Optical properties III-Nitride energy band gap Optoelectronic devices Optoelectronic devices -- Design and construction Optoelectronics -- Materials |
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Absorption coefficients Refractive index Optical properties III-Nitride energy band gap Optoelectronic devices Optoelectronic devices -- Design and construction Optoelectronics -- Materials Naser M., Ahmed Zaliman, Sauli Uda, Hashim Yarub, Al-Douri Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method |
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Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008 & vol. 2; issue 1 & 2, 2009. |
format |
Article |
author |
Naser M., Ahmed Zaliman, Sauli Uda, Hashim Yarub, Al-Douri |
author_facet |
Naser M., Ahmed Zaliman, Sauli Uda, Hashim Yarub, Al-Douri |
author_sort |
Naser M., Ahmed |
title |
Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method |
title_short |
Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method |
title_full |
Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method |
title_fullStr |
Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method |
title_full_unstemmed |
Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method |
title_sort |
investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for al0.11ga0.89n, al0.03ga0.97n, and gan by optical transmission method |
publisher |
Universiti Malaysia Perlis |
publishDate |
2009 |
url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/7123 |
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1643788697321078784 |
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13.222552 |