Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector
Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1 & 2, 2009.
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Universiti Malaysia Perlis
2009
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my.unimap-71202009-09-03T02:14:46Z Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector Raid A., Ismail Abdulmhdi, T. Rahmitalla Nasser, K. Mahdi Position sensitive detector Si Crystalline Rapid thermal annealing Semiconductors -- Heat treatment Crystals Crystalline silicon Silicon Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1 & 2, 2009. In this paper we report on the effect of rapid thermal annealing (RTA) on the characteristics of diffused crystalline p-n Si one-dimensional (1-D) position sensitive detector (PSD). The Si-PSDs are made with planer technology using thermal diffusion technique for Si doping. The lateral voltage produced by irradiation of He-Ne laser on PSD was parallel to the plane of junction and dependence linearly on laser spot position. The PSD that treated with best RTA condition (850 °C/15s) exhibited higher position sensitivity (104μV/mm) as compared with that for untreated PSD (31μV/mm).Furthermore, the best PSD gave a non-linearity error of 1.46%. The performance improvement factors such as uniformity, linearity, and responsivity of annealed Si-PSDs are presented and analyzed. 2009-09-03T02:14:46Z 2009-09-03T02:14:46Z 2009 Article International Journal of Nanoelectronics and Materials, vol.2 (2), 2009, pages 197-204. 1985-5761 (Printed) 1997-4434 (Online) http://hdl.handle.net/123456789/7120 en Universiti Malaysia Perlis |
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Malaysia |
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http://dspace.unimap.edu.my/ |
| language |
English |
| topic |
Position sensitive detector Si Crystalline Rapid thermal annealing Semiconductors -- Heat treatment Crystals Crystalline silicon Silicon |
| spellingShingle |
Position sensitive detector Si Crystalline Rapid thermal annealing Semiconductors -- Heat treatment Crystals Crystalline silicon Silicon Raid A., Ismail Abdulmhdi, T. Rahmitalla Nasser, K. Mahdi Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector |
| description |
Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1 & 2, 2009. |
| format |
Article |
| author |
Raid A., Ismail Abdulmhdi, T. Rahmitalla Nasser, K. Mahdi |
| author_facet |
Raid A., Ismail Abdulmhdi, T. Rahmitalla Nasser, K. Mahdi |
| author_sort |
Raid A., Ismail |
| title |
Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector |
| title_short |
Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector |
| title_full |
Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector |
| title_fullStr |
Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector |
| title_full_unstemmed |
Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector |
| title_sort |
effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector |
| publisher |
Universiti Malaysia Perlis |
| publishDate |
2009 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/7120 |
| _version_ |
1643788696420352000 |
| score |
13.214268 |