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Design of 100nm single-electron transistor (SET) by 2D TCAD simulation

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Main Authors: Amiza, Rasmi, Uda, Hashim, Awang Mat, Abd F
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineering (IEEE) 2009
Subjects:
Circuit simulation
Integrated circuits > Design and construction
Single electron transistors
Transistors
Integrated circuit design
Synopsys TCAD
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/6888
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spelling my.unimap-68882010-11-23T05:59:41Z Design of 100nm single-electron transistor (SET) by 2D TCAD simulation Amiza, Rasmi Uda, Hashim Awang Mat, Abd F Circuit simulation Integrated circuits -- Design and construction Single electron transistors Transistors Integrated circuit design Synopsys TCAD Link to publisher's homepage at http://ieeexplore.ieee.org One of the great problems in current large-scale integrated circuits (LSIs) is increasing power dissipation in a small silicon chip. Single-electron transistor (SET) which operate by means of one-by-one electron transfer, small size and consume very low power are suitable for achieving higher levels of integration. In this paper, SET is designed with lOOnm gate length and 10nm gate width is successfully simulated by Synopsys TCAD. The power of SET device that obtained from simulation is 3.771 x 10-9 Watt for fixed current and 3.3565 x 10-9 Watt if fixed the gate voltage, VG, and the capacitance of this device is 0.4297 aF. These results were achieved at room temperature operation. 2009-08-13T08:36:18Z 2009-08-13T08:36:18Z 2006 Article p.367-372 0-7803-9730-4 http://ieeexplore.ieee.org/xpls/abs_all.jsp?=&arnumber=4266633 http://hdl.handle.net/123456789/6888 en Proceedings of the IEEE International Conference on Semiconductor Electronics (ICSE 06) Institute of Electrical and Electronics Engineering (IEEE)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Circuit simulation
Integrated circuits -- Design and construction
Single electron transistors
Transistors
Integrated circuit design
Synopsys TCAD
spellingShingle Circuit simulation
Integrated circuits -- Design and construction
Single electron transistors
Transistors
Integrated circuit design
Synopsys TCAD
Amiza, Rasmi
Uda, Hashim
Awang Mat, Abd F
Design of 100nm single-electron transistor (SET) by 2D TCAD simulation
description Link to publisher's homepage at http://ieeexplore.ieee.org
format Article
author Amiza, Rasmi
Uda, Hashim
Awang Mat, Abd F
author_facet Amiza, Rasmi
Uda, Hashim
Awang Mat, Abd F
author_sort Amiza, Rasmi
title Design of 100nm single-electron transistor (SET) by 2D TCAD simulation
title_short Design of 100nm single-electron transistor (SET) by 2D TCAD simulation
title_full Design of 100nm single-electron transistor (SET) by 2D TCAD simulation
title_fullStr Design of 100nm single-electron transistor (SET) by 2D TCAD simulation
title_full_unstemmed Design of 100nm single-electron transistor (SET) by 2D TCAD simulation
title_sort design of 100nm single-electron transistor (set) by 2d tcad simulation
publisher Institute of Electrical and Electronics Engineering (IEEE)
publishDate 2009
url http://dspace.unimap.edu.my/xmlui/handle/123456789/6888
_version_ 1643788616667758592
score 13.160551

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