Electrodeposited ZnO-nanowire/Cu2O photovoltaic device with highly resistive ZnO intermediate layer
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2019
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my.unimap-618012019-09-11T04:17:34Z Electrodeposited ZnO-nanowire/Cu2O photovoltaic device with highly resistive ZnO intermediate layer Mohd Zamzuri, Mohammad Zain Masanobu, Izaki Ohta, Takayuki Kondo, Misaki Takahashi, Toshiaki Fariza, Mohamad Junji, Sasano Shinagawa, Tsutomu Pauporté, Thierry Cuprous oxide Zinc oxide Electrodeposition Photovoltaic device Nanowire Link to publisher's homepage at http://pubs.acs.org Cl-doped ZnO-nanowire (Cl:ZnO-nws)/Cu2O photovoltaic devices were prepared by electrodeposition in aqueous solutions, and the effects of the insertion of the highly resistive ZnO (i-ZnO) layer has been demonstrated by an improvement of the photovoltaic performance. The Cl:ZnO-nws and i-ZnO layer were prepared by electrodeposition in a zinc chloride aqueous solution with saturated molecular oxygen and simple zinc nitrate aqueous solution, respectively. The i-ZnO layer was directly deposited on the Cl:ZnO-nws and suppressed the electrodeposition of the Cu2O layer on the Cl:ZnO-nws. The insertion of the i-ZnO layer between the Cl:ZnO-nws and Cu2O layers induced an improvement in the photovoltaic performance from 0.40 to 1.26% with a 0.35 V open circuit voltage, 7.1 mA•cm-2 short circuit current density, and 0.52 fill factor due to the reduction of the recombination loss. 2019-09-11T04:16:50Z 2019-09-11T04:16:50Z 2014-07 Article ACS Applied Materials and Interfaces, Vol.6 (16), 2014, pages 13461-13469 1944-8244 (print) 1944-8252 (online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/61801 https://pubs.acs.org/doi/abs/10.1021/am502246j en American Chemical Society |
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Cuprous oxide Zinc oxide Electrodeposition Photovoltaic device Nanowire |
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Cuprous oxide Zinc oxide Electrodeposition Photovoltaic device Nanowire Mohd Zamzuri, Mohammad Zain Masanobu, Izaki Ohta, Takayuki Kondo, Misaki Takahashi, Toshiaki Fariza, Mohamad Junji, Sasano Shinagawa, Tsutomu Pauporté, Thierry Electrodeposited ZnO-nanowire/Cu2O photovoltaic device with highly resistive ZnO intermediate layer |
| description |
Link to publisher's homepage at http://pubs.acs.org |
| format |
Article |
| author |
Mohd Zamzuri, Mohammad Zain Masanobu, Izaki Ohta, Takayuki Kondo, Misaki Takahashi, Toshiaki Fariza, Mohamad Junji, Sasano Shinagawa, Tsutomu Pauporté, Thierry |
| author_facet |
Mohd Zamzuri, Mohammad Zain Masanobu, Izaki Ohta, Takayuki Kondo, Misaki Takahashi, Toshiaki Fariza, Mohamad Junji, Sasano Shinagawa, Tsutomu Pauporté, Thierry |
| author_sort |
Mohd Zamzuri, Mohammad Zain |
| title |
Electrodeposited ZnO-nanowire/Cu2O photovoltaic device with highly resistive ZnO intermediate layer |
| title_short |
Electrodeposited ZnO-nanowire/Cu2O photovoltaic device with highly resistive ZnO intermediate layer |
| title_full |
Electrodeposited ZnO-nanowire/Cu2O photovoltaic device with highly resistive ZnO intermediate layer |
| title_fullStr |
Electrodeposited ZnO-nanowire/Cu2O photovoltaic device with highly resistive ZnO intermediate layer |
| title_full_unstemmed |
Electrodeposited ZnO-nanowire/Cu2O photovoltaic device with highly resistive ZnO intermediate layer |
| title_sort |
electrodeposited zno-nanowire/cu2o photovoltaic device with highly resistive zno intermediate layer |
| publisher |
American Chemical Society |
| publishDate |
2019 |
| url |
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/61801 |
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1651868565747269632 |
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13.214268 |