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Design and development of extended power amplifier specifically for X-band applications

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Bibliographic Details
Main Author: Muhammad Nazif, Mohd Borhan
Other Authors: Dr. Norsuhaida Ahmad
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2016
Subjects:
Power amplifier
Power amplifier > Design and construction
RF amplifier
MESFET
Transistor
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41819
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spelling my.unimap-418192016-06-02T05:10:14Z Design and development of extended power amplifier specifically for X-band applications Muhammad Nazif, Mohd Borhan Dr. Norsuhaida Ahmad Power amplifier Power amplifier -- Design and construction RF amplifier MESFET Transistor Access is limited to UniMAP community. This paper concern with the design and simulation of RF amplifier using MESFET [TIM 8596_4UL] at 8.1 GHz to 10 GHz within x-band frequency range. RF amplifier designs rely on the terminal characteristics of the transistor as represented by Sparameter. S-parameter of transistor provides the necessary values to perform the analysis such as stability, DC-biasing and available gain. Based on the S-parameter of the transistor and certain performance requirements a systematic approach for the designing of RF power amplifier is developed using ADS [Advanced Design System]. RF amplifier circuit designed and simulated in ADS which has better stability but low magnitude of S21. By optimizing the DC-biasing circuit and using proper values of passive components, dielectric constant were achieved better performance. 2016-06-02T05:10:14Z 2016-06-02T05:10:14Z 2015-07 Learning Object http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41819 en Universiti Malaysia Perlis (UniMAP) School of Computer and Communication Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Power amplifier
Power amplifier -- Design and construction
RF amplifier
MESFET
Transistor
spellingShingle Power amplifier
Power amplifier -- Design and construction
RF amplifier
MESFET
Transistor
Muhammad Nazif, Mohd Borhan
Design and development of extended power amplifier specifically for X-band applications
description Access is limited to UniMAP community.
author2 Dr. Norsuhaida Ahmad
author_facet Dr. Norsuhaida Ahmad
Muhammad Nazif, Mohd Borhan
format Learning Object
author Muhammad Nazif, Mohd Borhan
author_sort Muhammad Nazif, Mohd Borhan
title Design and development of extended power amplifier specifically for X-band applications
title_short Design and development of extended power amplifier specifically for X-band applications
title_full Design and development of extended power amplifier specifically for X-band applications
title_fullStr Design and development of extended power amplifier specifically for X-band applications
title_full_unstemmed Design and development of extended power amplifier specifically for X-band applications
title_sort design and development of extended power amplifier specifically for x-band applications
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2016
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41819
_version_ 1643799817006088192
score 13.222552

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