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Simulation study of 2D electron density in primed and unprimed subband thin-body double-gate nano-MOSFET of three different thicknesses and two temperature states

Link to publisher's homepage at http://ijneam.unimap.edu.my/

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Main Authors: Yee, Ooi Chek, King, Lim Soo
Other Authors: ooicy@utar.edu.my
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2016
Subjects:
Ballistic transport
Classical behavior
Nanometer
Temperature effects
Wave nature
Particle
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41371
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spelling my.unimap-413712017-11-21T01:50:26Z Simulation study of 2D electron density in primed and unprimed subband thin-body double-gate nano-MOSFET of three different thicknesses and two temperature states Yee, Ooi Chek King, Lim Soo ooicy@utar.edu.my Ballistic transport Classical behavior Nanometer Temperature effects Wave nature Particle Link to publisher's homepage at http://ijneam.unimap.edu.my/ This paper presents a theoretical simulation study for electrical characteristics of double-gate (DG) nano-MOSFET at equilibrium thin-body condition. The electrical characteristics under studied are subband energy (including unprimed and primed subbands) as well as 2D electron density at 77K and 300K ambient temperatures. The values of silicon body thickness TSi are 1.0nm, 1.5nm and 2.0nm. The electron transport models used in NanoMOS simulation tool covered quantum model and classical model. The simulation output data are discussed based on quantum effects and property of particle-wave duality of electron. In quantum model, low temperature 77K exhibits wave interference effects whereas high temperature 300K exhibits particle nature. This is due to inelastic electronphonon collisions (quantized lattice vibrations) at high temperature. These inelastic collisions cause dephasing events. This decoherence causes nanodevices to exhibit classical behavior and is the most challenging problem faces when developing quantum computers. Currently, quantum computing is still in early development state. This study attempts to relate silicon-based nanodevice theory with a technology for quantum information processing. Quantum computers may become reality by incorporating the silicon semiconductor technology used by current electronic industry. The most advanced quantum computers have been established only in very small systems, such as an array of individual phosphorus donor atoms in pure silicon lattice in Kane quantum computer. So, the motivation for this study is to scale the quantum computer systems to very large sizes by using silicon nano-MOSFET. However, at large quantum computer systems, quantum errors occur due to decoherence. To solve this problem, large size quantum computers made from silicon nano MOSFET should operate at cryogenic temperature (extremely low temperature) where electrons behave like wave. Quantum mechanics enables nanodevice systems to store and manipulate a vast amount of information. Therefore, nanodevice is simulated in this paper in order to examine quantum computer. 2016-04-26T07:49:33Z 2016-04-26T07:49:33Z 2016 Article International Journal of Nanoelectronics and Materials, vol.9 (1), 2016 pages 67-84 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41371 en Universiti Malaysia Perlis
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Ballistic transport
Classical behavior
Nanometer
Temperature effects
Wave nature
Particle
spellingShingle Ballistic transport
Classical behavior
Nanometer
Temperature effects
Wave nature
Particle
Yee, Ooi Chek
King, Lim Soo
Simulation study of 2D electron density in primed and unprimed subband thin-body double-gate nano-MOSFET of three different thicknesses and two temperature states
description Link to publisher's homepage at http://ijneam.unimap.edu.my/
author2 ooicy@utar.edu.my
author_facet ooicy@utar.edu.my
Yee, Ooi Chek
King, Lim Soo
format Article
author Yee, Ooi Chek
King, Lim Soo
author_sort Yee, Ooi Chek
title Simulation study of 2D electron density in primed and unprimed subband thin-body double-gate nano-MOSFET of three different thicknesses and two temperature states
title_short Simulation study of 2D electron density in primed and unprimed subband thin-body double-gate nano-MOSFET of three different thicknesses and two temperature states
title_full Simulation study of 2D electron density in primed and unprimed subband thin-body double-gate nano-MOSFET of three different thicknesses and two temperature states
title_fullStr Simulation study of 2D electron density in primed and unprimed subband thin-body double-gate nano-MOSFET of three different thicknesses and two temperature states
title_full_unstemmed Simulation study of 2D electron density in primed and unprimed subband thin-body double-gate nano-MOSFET of three different thicknesses and two temperature states
title_sort simulation study of 2d electron density in primed and unprimed subband thin-body double-gate nano-mosfet of three different thicknesses and two temperature states
publisher Universiti Malaysia Perlis
publishDate 2016
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41371
_version_ 1643802802227511296
score 13.214268

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