Effect of Al doping on Band Gap of hexagonal cross section SiNWs
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my.unimap-413272017-11-21T02:06:53Z Effect of Al doping on Band Gap of hexagonal cross section SiNWs Kausar, Sana Joshi, Shirish Srivastava, Anurag Castep Nanowires DFT GGA Link to publisher's homepage at http://ijneam.unimap.edu.my/ In this work band structure of hydrogen-passivated, free-standing silicon nanowires, oriented along [111] direction with hexagonal cross section was studied by using density functional theory using GGA approximation. Effect of doping of aluminium atom on band gap of silicon nanowire is also analyzed. It is found that doping of single Al atom can reduced the band gap of Si nanowire. 2016-04-22T10:14:07Z 2016-04-22T10:14:07Z 2014 Article International Journal of Nanoelectronics and Materials, vol.7 (2), 2014, pages 77-84 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41327 en Universiti Malaysia Perlis |
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Castep Nanowires DFT GGA Kausar, Sana Joshi, Shirish Srivastava, Anurag Effect of Al doping on Band Gap of hexagonal cross section SiNWs |
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Link to publisher's homepage at http://ijneam.unimap.edu.my/ |
format |
Article |
author |
Kausar, Sana Joshi, Shirish Srivastava, Anurag |
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Kausar, Sana Joshi, Shirish Srivastava, Anurag |
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Kausar, Sana |
title |
Effect of Al doping on Band Gap of hexagonal cross section SiNWs |
title_short |
Effect of Al doping on Band Gap of hexagonal cross section SiNWs |
title_full |
Effect of Al doping on Band Gap of hexagonal cross section SiNWs |
title_fullStr |
Effect of Al doping on Band Gap of hexagonal cross section SiNWs |
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Effect of Al doping on Band Gap of hexagonal cross section SiNWs |
title_sort |
effect of al doping on band gap of hexagonal cross section sinws |
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Universiti Malaysia Perlis |
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2016 |
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http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41327 |
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1643802798783987712 |
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13.211869 |