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Morphology of CdTe thin films and CdTe/GaAs heterojunction

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Main Authors: Al-Douri, A. A., Alnajjar, A. A., Alias, M. F., Al-Shakily, F. Y.
Other Authors: douri@sharjah.ac.ae
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2016
Subjects:
Surface morphology
CdTe thin films
CdTe/GaAs heterojunction
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41250
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spelling my.unimap-412502017-11-21T03:21:55Z Morphology of CdTe thin films and CdTe/GaAs heterojunction Al-Douri, A. A. Alnajjar, A. A. Alias, M. F. Al-Shakily, F. Y. douri@sharjah.ac.ae Surface morphology CdTe thin films CdTe/GaAs heterojunction Link to publisher's homepage at http://ijneam.unimap.edu.my/ This paper is a study of films of CdTe pure and doped with both atomic percentages concentration of Al and Sb (0.5% and 2.5%) of about 0.5 μm thickness. These films of CdTe were prepared by a thermal evaporation technique on glass substrate and both type of GaAS were deposited on wafers (p- and n-type). The substrate temperatures films were at room temperature (RT) and 423K. The energy dispersive X-ray analysis (EDX) technique was used to assess the role of the deposition parameters on the evolution of the films structure. Regarding the percentage comprised of prepared films, the outcomes data analysis for using this approach to scan the films prepared at various deposition conditions coincided with theoretical percentage values of Cd, Te, Al and Sb in pure and doped CdTe thin film. The heterojunction of CdTe/p- and n-GaAs was prepared and the surface morphology was investigated. The surface morphology of CdTe thin films was grown on glass and both types of GaAs were performed using nanoscanning electron microscope. In general, the results showed that the average grain size for doped film with Al and Sb is more than for pure films. All films are homogeneous and the average grain size of film doped with Sb is higher that for pure films. For pure CdTe/p-GaAs heterojunctions, as the substrate temperature increases, the average grain size of CdTe thin films are enlarged and become more homogeneous. The analysis of the findings of the present study suggests that these films can be used for fabrication of a variety of optoelectronic devices. 2016-04-01T09:10:44Z 2016-04-01T09:10:44Z 2012 Article International Journal of Nanoelectronics and Materials, vol.5 (1), 2012, pages 67-75 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41250 en Universiti Malaysia Perlis
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Surface morphology
CdTe thin films
CdTe/GaAs heterojunction
spellingShingle Surface morphology
CdTe thin films
CdTe/GaAs heterojunction
Al-Douri, A. A.
Alnajjar, A. A.
Alias, M. F.
Al-Shakily, F. Y.
Morphology of CdTe thin films and CdTe/GaAs heterojunction
description Link to publisher's homepage at http://ijneam.unimap.edu.my/
author2 douri@sharjah.ac.ae
author_facet douri@sharjah.ac.ae
Al-Douri, A. A.
Alnajjar, A. A.
Alias, M. F.
Al-Shakily, F. Y.
format Article
author Al-Douri, A. A.
Alnajjar, A. A.
Alias, M. F.
Al-Shakily, F. Y.
author_sort Al-Douri, A. A.
title Morphology of CdTe thin films and CdTe/GaAs heterojunction
title_short Morphology of CdTe thin films and CdTe/GaAs heterojunction
title_full Morphology of CdTe thin films and CdTe/GaAs heterojunction
title_fullStr Morphology of CdTe thin films and CdTe/GaAs heterojunction
title_full_unstemmed Morphology of CdTe thin films and CdTe/GaAs heterojunction
title_sort morphology of cdte thin films and cdte/gaas heterojunction
publisher Universiti Malaysia Perlis
publishDate 2016
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41250
_version_ 1643802788280401920
score 13.214268

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