Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study
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my.unimap-412342017-11-21T03:45:23Z Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study Chaudhry, Amit Nath Roy, Jatinder amit_chaudhry01@yahoo.com. Quantization Tunneling Model Link to publisher's homepage at http://ijneam.unimap.edu.my/ In this paper, we investigate the effect of depletion and doping variation in the poly-silicon on the direct tunneling current of an ultra thin oxide n-MOSFET. The one dimension (1-D) poly silicon depletion effect has been analytically modeled. The tunneling probability is calculated by Wentzel-Kramers-Brilliouin (WKB) approximation. The results show a decrease in tunneling current density under poly depletion conditions and increase if the doping density in the poly increases. The results have also been compared with the numerically reported results which show good agreement. 2016-03-31T04:52:36Z 2016-03-31T04:52:36Z 2011 Article International Journal of Nanoelectronics and Materials, vol.4 (2), 2011, pages 93-100 1985-5761 (Printed) 1997-4434 (Online) http://ijneam.unimap.edu.my/ http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41234 en Universiti Malaysia Perlis |
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Quantization Tunneling Model Chaudhry, Amit Nath Roy, Jatinder Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study |
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Link to publisher's homepage at http://ijneam.unimap.edu.my/ |
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amit_chaudhry01@yahoo.com. |
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amit_chaudhry01@yahoo.com. Chaudhry, Amit Nath Roy, Jatinder |
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Article |
author |
Chaudhry, Amit Nath Roy, Jatinder |
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Chaudhry, Amit |
title |
Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study |
title_short |
Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study |
title_full |
Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study |
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Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study |
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Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study |
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gate oxice leakage in poly-depleted nanoscale-mosfet: a quantum mechanical study |
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Universiti Malaysia Perlis |
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2016 |
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http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41234 |
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1643802787094462464 |
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13.222552 |