Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study

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Main Authors: Chaudhry, Amit, Nath Roy, Jatinder
Other Authors: amit_chaudhry01@yahoo.com.
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2016
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Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41234
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spelling my.unimap-412342017-11-21T03:45:23Z Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study Chaudhry, Amit Nath Roy, Jatinder amit_chaudhry01@yahoo.com. Quantization Tunneling Model Link to publisher's homepage at http://ijneam.unimap.edu.my/ In this paper, we investigate the effect of depletion and doping variation in the poly-silicon on the direct tunneling current of an ultra thin oxide n-MOSFET. The one dimension (1-D) poly silicon depletion effect has been analytically modeled. The tunneling probability is calculated by Wentzel-Kramers-Brilliouin (WKB) approximation. The results show a decrease in tunneling current density under poly depletion conditions and increase if the doping density in the poly increases. The results have also been compared with the numerically reported results which show good agreement. 2016-03-31T04:52:36Z 2016-03-31T04:52:36Z 2011 Article International Journal of Nanoelectronics and Materials, vol.4 (2), 2011, pages 93-100 1985-5761 (Printed) 1997-4434 (Online) http://ijneam.unimap.edu.my/ http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41234 en Universiti Malaysia Perlis
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Quantization
Tunneling
Model
spellingShingle Quantization
Tunneling
Model
Chaudhry, Amit
Nath Roy, Jatinder
Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study
description Link to publisher's homepage at http://ijneam.unimap.edu.my/
author2 amit_chaudhry01@yahoo.com.
author_facet amit_chaudhry01@yahoo.com.
Chaudhry, Amit
Nath Roy, Jatinder
format Article
author Chaudhry, Amit
Nath Roy, Jatinder
author_sort Chaudhry, Amit
title Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study
title_short Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study
title_full Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study
title_fullStr Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study
title_full_unstemmed Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study
title_sort gate oxice leakage in poly-depleted nanoscale-mosfet: a quantum mechanical study
publisher Universiti Malaysia Perlis
publishDate 2016
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41234
_version_ 1643802787094462464
score 13.214268