Optical characterization of SixGe1-x films grown on nanostructured Si substrates

Link to publisher's homepage at http://ieeexplore.ieee.org

Saved in:
Bibliographic Details
Main Authors: Ayu Wazira, Azhari, Adnan K Shafeeque, Ali, Kamaruzzaman, Sopian, Saleem Hussain, Zaidi, Uda, Hashim
Other Authors: ayuwazira@unimap.edu.my
Format: Article
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2016
Subjects:
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41177
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.unimap-41177
record_format dspace
spelling my.unimap-411772016-03-22T02:14:04Z Optical characterization of SixGe1-x films grown on nanostructured Si substrates Ayu Wazira, Azhari Adnan K Shafeeque, Ali Kamaruzzaman, Sopian Saleem Hussain, Zaidi Uda, Hashim ayuwazira@unimap.edu.my Ge and SixGe1-x heteroepitaxial growth IR transmission Nanostructured Si Raman spectroscopy Solar cells Link to publisher's homepage at http://ieeexplore.ieee.org High quality Ge and SixGe1-x films grown on Si substrates are attractive for a wide range of applications in optics, optoelectronics, and high efficiency solar cells. In this study, heteroepitaxial growth of Ge on nanostructured Si surfaces has been investigated. Thermally evaporated amorphous Ge films are vacuum-deposited and crystallized by thermal annealing at 1000 °C. Scanning electron microscope (SEM), spectroscopy (RS), infrared (IR) transmission, and Raman methods are used to characterize amorphous and crystalline Ge films. SEM analysis reveals presence of dominant features including cracks, microscopic roughness, and islands. RS exhibits strong multiple peaks attributed to crystalline structures related to Si-Ge at ∼ 444 cm-1 and Ge at 300 cm-1; narrow and stronger peaks are observed in thermally annealed films. A comparison of IR transmission measurements in 900-1700-nm spectral range shows that amorphous film absorption is significantly higher than that of crystalline films consistent with respective bandgaps. A more detailed analysis including EDX and XRD measurements will be presented at the conference. 2016-03-22T02:00:27Z 2016-03-22T02:00:27Z 2014-10-15 Article 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, pages 0198-0201 978-147994398-2 http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41177 10.1109/PVSC.2014.6925565 en IEEE 40th Photovoltaic Specialist Conference; Institute of Electrical and Electronics Engineers Inc.
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Ge and SixGe1-x heteroepitaxial growth
IR transmission
Nanostructured Si
Raman spectroscopy
Solar cells
spellingShingle Ge and SixGe1-x heteroepitaxial growth
IR transmission
Nanostructured Si
Raman spectroscopy
Solar cells
Ayu Wazira, Azhari
Adnan K Shafeeque, Ali
Kamaruzzaman, Sopian
Saleem Hussain, Zaidi
Uda, Hashim
Optical characterization of SixGe1-x films grown on nanostructured Si substrates
description Link to publisher's homepage at http://ieeexplore.ieee.org
author2 ayuwazira@unimap.edu.my
author_facet ayuwazira@unimap.edu.my
Ayu Wazira, Azhari
Adnan K Shafeeque, Ali
Kamaruzzaman, Sopian
Saleem Hussain, Zaidi
Uda, Hashim
format Article
author Ayu Wazira, Azhari
Adnan K Shafeeque, Ali
Kamaruzzaman, Sopian
Saleem Hussain, Zaidi
Uda, Hashim
author_sort Ayu Wazira, Azhari
title Optical characterization of SixGe1-x films grown on nanostructured Si substrates
title_short Optical characterization of SixGe1-x films grown on nanostructured Si substrates
title_full Optical characterization of SixGe1-x films grown on nanostructured Si substrates
title_fullStr Optical characterization of SixGe1-x films grown on nanostructured Si substrates
title_full_unstemmed Optical characterization of SixGe1-x films grown on nanostructured Si substrates
title_sort optical characterization of sixge1-x films grown on nanostructured si substrates
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2016
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41177
_version_ 1643799613668327424
score 13.214268