Cover Image

High accuracy linear and nonlinear models for pHEMT devices

Received a Gold medal in 25th International Invention, Innovation & Technology Exhibition (ITEX'14), 8th-10th May at Kuala Lumpur Convention Centre.

Saved in:
Bibliographic Details
Main Author: Norhawati, Ahmad, Dr.
Other Authors: norhawati@unimap.edu.my
Format: Other
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2014
Subjects:
International Invention, Innovation & Technology Exhibition (ITEX'14)
Transistor
pHEMT device
Circuit design
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/36139
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.unimap-36139
record_format dspace
spelling my.unimap-361392014-07-09T07:07:24Z High accuracy linear and nonlinear models for pHEMT devices Norhawati, Ahmad, Dr. norhawati@unimap.edu.my International Invention, Innovation & Technology Exhibition (ITEX'14) Transistor pHEMT device Circuit design Received a Gold medal in 25th International Invention, Innovation & Technology Exhibition (ITEX'14), 8th-10th May at Kuala Lumpur Convention Centre. • An accurate linear and nonlinear models of a transistor or also known as transistor model is an essential requirement for any circuit design. Therefore, there is a continuous effort from circuit designers to produce efficient transistor model. The high accuracy of transistor model will enable the designer to predict the real output of the circuit before the design is fabricated into the actual chip. • These days, the models for CMOS transistor using silicon technology are well established. These CMOS transistor models are ready to most of Computer Aided Design (CAD) software such as CADENCE and Mentor Graphics. However, for advanced devices from other high frequency materials like InP pseudomorphic High Electron Mobility Transistor (pHEMT), the transistor models still an issue. Therefore, there are many effort carried out to publish the best method for higher accuracy of the pHEMT transistor models. • Consequently, this work presents the high accuracy linear and nonlinear models of InP pHEMT devices for circuit designs especially in high speed, high frequency, low noise applications such as Low Noise Amplifier (LNA). 2014-07-09T07:07:24Z 2014-07-09T07:07:24Z 2014-05 Other http://dspace.unimap.edu.my:80/dspace/handle/123456789/36139 en 25th International Invention, Innovation & Technology Exhibition;ITEX'14 Universiti Malaysia Perlis (UniMAP) School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic International Invention, Innovation & Technology Exhibition (ITEX'14)
Transistor
pHEMT device
Circuit design
spellingShingle International Invention, Innovation & Technology Exhibition (ITEX'14)
Transistor
pHEMT device
Circuit design
Norhawati, Ahmad, Dr.
High accuracy linear and nonlinear models for pHEMT devices
description Received a Gold medal in 25th International Invention, Innovation & Technology Exhibition (ITEX'14), 8th-10th May at Kuala Lumpur Convention Centre.
author2 norhawati@unimap.edu.my
author_facet norhawati@unimap.edu.my
Norhawati, Ahmad, Dr.
format Other
author Norhawati, Ahmad, Dr.
author_sort Norhawati, Ahmad, Dr.
title High accuracy linear and nonlinear models for pHEMT devices
title_short High accuracy linear and nonlinear models for pHEMT devices
title_full High accuracy linear and nonlinear models for pHEMT devices
title_fullStr High accuracy linear and nonlinear models for pHEMT devices
title_full_unstemmed High accuracy linear and nonlinear models for pHEMT devices
title_sort high accuracy linear and nonlinear models for phemt devices
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/36139
_version_ 1643798024589148160
score 13.222552

Similar Items