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A comparative study of confined carrier concentration of laser using quantum well and quantum dot in active layer

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Main Authors: Md. Abdullah, Al Humayun, Mohd Abdur Rashid, Dr., Mohd Fareq, Abd. Malek, Dr., Adawati, Yusof, Farrah Salwani, Abdullah, Nor Baizura, Ahmad
Other Authors: humayun0403063@gmail.com
Format: Article
Language:English
Published: Trans Tech Publications 2014
Subjects:
Active layer thickness
InxGa1-xN
Quantum dot
Quantum well
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/33191
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spelling my.unimap-331912014-03-28T08:41:57Z A comparative study of confined carrier concentration of laser using quantum well and quantum dot in active layer Md. Abdullah, Al Humayun Mohd Abdur Rashid, Dr. Mohd Fareq, Abd. Malek, Dr. Adawati, Yusof Farrah Salwani, Abdullah Nor Baizura, Ahmad humayun0403063@gmail.com abdurrashid@unimap.edu.my mfareq@unimap.edu.my adawati@unimap.edu.my farrahsalwani@unimap.edu.my baizura@unimap.edu.my Active layer thickness InxGa1-xN Quantum dot Quantum well Link to publisher's homepage at http://www.ttp.net/ This paper presents a comparative analysis of the characteristics of confined carrier concentration in the gain medium as well as the carrier concentration at the threshold. We have studied extensively these phenomena by using In x Ga1-x N based quantum well and InxGa1-x N based quantum dot in the active layer of the laser structure. The numerical results obtained are compared to investigate the superiority of the quantum dot over quantum well. It is ascertained from the comparison results that InxGa1-xN based quantum dot provides higher density of confined carrier and lower level of carrier concentration required for lasing action. This paper reports the enhancement of confined carrier density and minimization of carrier concentration at threshol of laser using InxGa1-xN based quantum dot as the active layer material. Hence, it is revealed that better performances of lasers have been demonstrated using InxGa1-xN based quantum dot than that of quantum well in the active medium of the device structure. 2014-03-28T08:41:57Z 2014-03-28T08:41:57Z 2013 Article Advanced Materials Research, vol. 701, 2013, pages 188-191 978-303785704-5 1022-6680 http://www.scientific.net/AMR.701.188 http://dspace.unimap.edu.my:80/dspace/handle/123456789/33191 en Trans Tech Publications
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Active layer thickness
InxGa1-xN
Quantum dot
Quantum well
spellingShingle Active layer thickness
InxGa1-xN
Quantum dot
Quantum well
Md. Abdullah, Al Humayun
Mohd Abdur Rashid, Dr.
Mohd Fareq, Abd. Malek, Dr.
Adawati, Yusof
Farrah Salwani, Abdullah
Nor Baizura, Ahmad
A comparative study of confined carrier concentration of laser using quantum well and quantum dot in active layer
description Link to publisher's homepage at http://www.ttp.net/
author2 humayun0403063@gmail.com
author_facet humayun0403063@gmail.com
Md. Abdullah, Al Humayun
Mohd Abdur Rashid, Dr.
Mohd Fareq, Abd. Malek, Dr.
Adawati, Yusof
Farrah Salwani, Abdullah
Nor Baizura, Ahmad
format Article
author Md. Abdullah, Al Humayun
Mohd Abdur Rashid, Dr.
Mohd Fareq, Abd. Malek, Dr.
Adawati, Yusof
Farrah Salwani, Abdullah
Nor Baizura, Ahmad
author_sort Md. Abdullah, Al Humayun
title A comparative study of confined carrier concentration of laser using quantum well and quantum dot in active layer
title_short A comparative study of confined carrier concentration of laser using quantum well and quantum dot in active layer
title_full A comparative study of confined carrier concentration of laser using quantum well and quantum dot in active layer
title_fullStr A comparative study of confined carrier concentration of laser using quantum well and quantum dot in active layer
title_full_unstemmed A comparative study of confined carrier concentration of laser using quantum well and quantum dot in active layer
title_sort comparative study of confined carrier concentration of laser using quantum well and quantum dot in active layer
publisher Trans Tech Publications
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/33191
_version_ 1643797094773817344
score 13.222552

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