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Optoelectronic properties of GaAs and AlAs under temperature effect

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Main Authors: Yarub, Al-Douri, Assoc. Prof. Dr., Ali Hussain, Reshak, Prof. Dr., Uda, Hashim, Prof. Dr.
Other Authors: yaldouri@yahoo.com
Format: Article
Language:English
Published: Elsevier GmbH 2014
Subjects:
Empirical Pseudopotential Method
III-V semiconductors
Temperature effect
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/32611
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spelling my.unimap-326112014-03-12T02:51:44Z Optoelectronic properties of GaAs and AlAs under temperature effect Yarub, Al-Douri, Assoc. Prof. Dr. Ali Hussain, Reshak, Prof. Dr. Uda, Hashim, Prof. Dr. yaldouri@yahoo.com yarub@unimap.edu.my maalidph@yahoo.co.uk uda@unimap.edu.my Empirical Pseudopotential Method III-V semiconductors Temperature effect Link to publisher's homepage at www.elsevier.de/ An application study of optoelectronic properties as a function of the temperature for GaAs and AlAs according to our model has been presented using empirical pseudopotential method (EPM). The structural phase transition can be seen easily from behavior of the bonding character. The results are compared with the experimental data with reasonable agreement 2014-03-12T02:51:44Z 2014-03-12T02:51:44Z 2013-08 Article Optik, vol. 124(15), 2013, pages 2128-2130 0030-4026 http://www.sciencedirect.com/science/article/pii/S0030402612004664 http://dspace.unimap.edu.my:80/dspace/handle/123456789/32611 en Elsevier GmbH
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Empirical Pseudopotential Method
III-V semiconductors
Temperature effect
spellingShingle Empirical Pseudopotential Method
III-V semiconductors
Temperature effect
Yarub, Al-Douri, Assoc. Prof. Dr.
Ali Hussain, Reshak, Prof. Dr.
Uda, Hashim, Prof. Dr.
Optoelectronic properties of GaAs and AlAs under temperature effect
description Link to publisher's homepage at www.elsevier.de/
author2 yaldouri@yahoo.com
author_facet yaldouri@yahoo.com
Yarub, Al-Douri, Assoc. Prof. Dr.
Ali Hussain, Reshak, Prof. Dr.
Uda, Hashim, Prof. Dr.
format Article
author Yarub, Al-Douri, Assoc. Prof. Dr.
Ali Hussain, Reshak, Prof. Dr.
Uda, Hashim, Prof. Dr.
author_sort Yarub, Al-Douri, Assoc. Prof. Dr.
title Optoelectronic properties of GaAs and AlAs under temperature effect
title_short Optoelectronic properties of GaAs and AlAs under temperature effect
title_full Optoelectronic properties of GaAs and AlAs under temperature effect
title_fullStr Optoelectronic properties of GaAs and AlAs under temperature effect
title_full_unstemmed Optoelectronic properties of GaAs and AlAs under temperature effect
title_sort optoelectronic properties of gaas and alas under temperature effect
publisher Elsevier GmbH
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/32611
_version_ 1643796932206788608
score 13.214268

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