Development and fabrication of Ion-sensitive Field Effect Transistor (ISFET) for pH detection, DNA immobilization and hybridization

The fabrication of ion sensitive field-effect transistor (ISFET) using silicon nitride (Si3N4) as the sensing membrane is reported. The operation of ISFET is based on the surface charge adsorption of the membrane-solution interface. This thesis describes the design, fabrication and characterization...

詳細記述

保存先:
書誌詳細
第一著者: Chong, Soon Weng
フォーマット: 学位論文
言語:English
出版事項: Universiti Malaysia Perlis (UniMAP) 2014
主題:
オンライン・アクセス:http://dspace.unimap.edu.my:80/dspace/handle/123456789/31211
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