Bismuth in gallium arsenide: Structural and electronic properties of GaAs 1-xBi x alloys

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Main Authors: Ali Hussain, Reshak, Prof. Dr., Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr., Auluck, Sushil, Dr.
Other Authors: maalidph@yahoo.co.uk
Format: Article
Language:English
Published: Elsevier Inc. 2014
Subjects:
DFT
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/31193
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spelling my.unimap-311932014-01-14T13:09:57Z Bismuth in gallium arsenide: Structural and electronic properties of GaAs 1-xBi x alloys Ali Hussain, Reshak, Prof. Dr. Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr. Auluck, Sushil, Dr. maalidph@yahoo.co.uk kamarudin@unimap.edu.my sauluck@iitk.ac.in GaAs1−xBix alloys Bismuth-containing semiconductors DFT FPLAPW Link to publisher's homepage at http://www.elsevier.com/ The structural and electronic properties of cubic GaAs 1-xBi x alloys with bismuth concentration 0.0, 0.25, 0.50, 0.75 and 1.0 are studied using the 'special quasi-random structures' (SQS) approach of Zunger along with the generalized gradient approximation (GGA) and the EngelVosko generalized gradient approximation (EV-GGA). The lattice constant, bulk modulus, derivative of bulk modulus and energy gap vary with bismuth concentration nonlinearly. The present calculations show that the band gap decreases substantially with increasing bismuth concentration and that spinorbit coupling influences the nature of bonding at high Bi concentrations. 2014-01-14T13:09:57Z 2014-01-14T13:09:57Z 2012-02 Article Journal of Solid State Chemistry, vol. 186, 2012, pages 47-53 0022-4596 http://www.sciencedirect.com/science/article/pii/S0022459611006219 http://dspace.unimap.edu.my:80/dspace/handle/123456789/31193 en Elsevier Inc.
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic GaAs1−xBix alloys
Bismuth-containing semiconductors
DFT
FPLAPW
spellingShingle GaAs1−xBix alloys
Bismuth-containing semiconductors
DFT
FPLAPW
Ali Hussain, Reshak, Prof. Dr.
Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr.
Auluck, Sushil, Dr.
Bismuth in gallium arsenide: Structural and electronic properties of GaAs 1-xBi x alloys
description Link to publisher's homepage at http://www.elsevier.com/
author2 maalidph@yahoo.co.uk
author_facet maalidph@yahoo.co.uk
Ali Hussain, Reshak, Prof. Dr.
Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr.
Auluck, Sushil, Dr.
format Article
author Ali Hussain, Reshak, Prof. Dr.
Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr.
Auluck, Sushil, Dr.
author_sort Ali Hussain, Reshak, Prof. Dr.
title Bismuth in gallium arsenide: Structural and electronic properties of GaAs 1-xBi x alloys
title_short Bismuth in gallium arsenide: Structural and electronic properties of GaAs 1-xBi x alloys
title_full Bismuth in gallium arsenide: Structural and electronic properties of GaAs 1-xBi x alloys
title_fullStr Bismuth in gallium arsenide: Structural and electronic properties of GaAs 1-xBi x alloys
title_full_unstemmed Bismuth in gallium arsenide: Structural and electronic properties of GaAs 1-xBi x alloys
title_sort bismuth in gallium arsenide: structural and electronic properties of gaas 1-xbi x alloys
publisher Elsevier Inc.
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/31193
_version_ 1643796496548626432
score 13.222552