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Fabrication and characterization of porous silicon using long time low current electrochemical etching

The 2nd International Malaysia-Ireland Joint Symposium on Engineering, Science and Business 2012 (IMiEJS2012) jointly organized by Universiti Malaysia Perlis and Athlone Institute of Technology in collaboration with The Ministry of Higher Education (MOHE) Malaysia, Education Malaysia and Malaysia Po...

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Main Authors: Husnen R., Abd, Ahmed, Naser M., Yarub, Al - Douri, Assoc. Prof. Dr., Uda, Hashim, Prof. Dr.
Other Authors: husnen78@yahoo.com
Format: Working Paper
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2013
Subjects:
Porous silicon
Photoelectrochemical etching
Reflectance
Photoluminescence
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/30614
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spelling my.unimap-306142017-11-29T07:09:00Z Fabrication and characterization of porous silicon using long time low current electrochemical etching Husnen R., Abd Ahmed, Naser M. Yarub, Al - Douri, Assoc. Prof. Dr. Uda, Hashim, Prof. Dr. husnen78@yahoo.com nas_tiji@yahoo.com Porous silicon Photoelectrochemical etching Reflectance Photoluminescence The 2nd International Malaysia-Ireland Joint Symposium on Engineering, Science and Business 2012 (IMiEJS2012) jointly organized by Universiti Malaysia Perlis and Athlone Institute of Technology in collaboration with The Ministry of Higher Education (MOHE) Malaysia, Education Malaysia and Malaysia Postgraduates Student Association Ireland (MyPSI), 18th - 19th June 2012 at Putra World Trade Center (PWTC), Kuala Lumpur, Malaysia. In this paper, the fabrication of porous silicon (PS) layers based on crystalline silicon (c-Si) wafers n-type of (100) orientation using electrochemical etching process was prepared. The effect of various etching time on structural and optical properties of PS has been investigated. Surface morphology of PS was characterized using scanning electron microscopy (SEM). Photoluminescence (PL) measurements of PS were performed at room temperature (RT). Additionally, the reflectance of PS was obtained using optical reflectometer (Filmetrics-F20). Etching time of 30, 60 and 120 min, with low current density 5mA/cm2 DC current has been compared. The results revealed at 120 minutes etching time exhibits high porosity and uniform distribution. 2013-12-19T11:36:22Z 2013-12-19T11:36:22Z 2012-06-18 Working Paper p. 1052-1056 978-967-5760-11-2 http://hdl.handle.net/123456789/30614 en Proceedings of the The 2nd International Malaysia-Ireland Joint Symposium on Engineering, Science and Business 2012 (IMiEJS2012); Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Porous silicon
Photoelectrochemical etching
Reflectance
Photoluminescence
spellingShingle Porous silicon
Photoelectrochemical etching
Reflectance
Photoluminescence
Husnen R., Abd
Ahmed, Naser M.
Yarub, Al - Douri, Assoc. Prof. Dr.
Uda, Hashim, Prof. Dr.
Fabrication and characterization of porous silicon using long time low current electrochemical etching
description The 2nd International Malaysia-Ireland Joint Symposium on Engineering, Science and Business 2012 (IMiEJS2012) jointly organized by Universiti Malaysia Perlis and Athlone Institute of Technology in collaboration with The Ministry of Higher Education (MOHE) Malaysia, Education Malaysia and Malaysia Postgraduates Student Association Ireland (MyPSI), 18th - 19th June 2012 at Putra World Trade Center (PWTC), Kuala Lumpur, Malaysia.
author2 husnen78@yahoo.com
author_facet husnen78@yahoo.com
Husnen R., Abd
Ahmed, Naser M.
Yarub, Al - Douri, Assoc. Prof. Dr.
Uda, Hashim, Prof. Dr.
format Working Paper
author Husnen R., Abd
Ahmed, Naser M.
Yarub, Al - Douri, Assoc. Prof. Dr.
Uda, Hashim, Prof. Dr.
author_sort Husnen R., Abd
title Fabrication and characterization of porous silicon using long time low current electrochemical etching
title_short Fabrication and characterization of porous silicon using long time low current electrochemical etching
title_full Fabrication and characterization of porous silicon using long time low current electrochemical etching
title_fullStr Fabrication and characterization of porous silicon using long time low current electrochemical etching
title_full_unstemmed Fabrication and characterization of porous silicon using long time low current electrochemical etching
title_sort fabrication and characterization of porous silicon using long time low current electrochemical etching
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2013
url http://dspace.unimap.edu.my/xmlui/handle/123456789/30614
_version_ 1643802741340897280
score 13.222552

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