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Efficiency enhancement of InN quantum dot based solar cell

The 2nd International Malaysia-Ireland Joint Symposium on Engineering, Science and Business 2012 (IMiEJS2012) jointly organized by Universiti Malaysia Perlis and Athlone Institute of Technology in collaboration with The Ministry of Higher Education (MOHE) Malaysia, Education Malaysia and Malaysia Po...

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Main Authors: Humayun, M. A., Mohd Abdur, Rashid, Dr., Mohd Fareq, Abd Malek, Prof. Madya Dr., A. N., Hussain, Ismail, Daut, Prof. Dr.
Other Authors: humayun0403063@gmail.com
Format: Working Paper
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2013
Subjects:
Quantum dot
Solar cells
Heterostructure
InN
Efficiency
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/29017
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spelling my.unimap-290172013-10-21T07:14:31Z Efficiency enhancement of InN quantum dot based solar cell Humayun, M. A. Mohd Abdur, Rashid, Dr. Mohd Fareq, Abd Malek, Prof. Madya Dr. A. N., Hussain Ismail, Daut, Prof. Dr. humayun0403063@gmail.com Quantum dot Solar cells Heterostructure InN Efficiency The 2nd International Malaysia-Ireland Joint Symposium on Engineering, Science and Business 2012 (IMiEJS2012) jointly organized by Universiti Malaysia Perlis and Athlone Institute of Technology in collaboration with The Ministry of Higher Education (MOHE) Malaysia, Education Malaysia and Malaysia Postgraduates Student Association Ireland (MyPSI), 18th - 19th June 2012 at Putra World Trade Center (PWTC), Kuala Lumpur, Malaysia. A fundamental limitation in achieving ultra-high efficiency solar cells (> 60%) is the availability of materials and corresponding device structures. The InGaN material system offer substantial potential in developing ultra-high efficiency devices, both because of measurements indicating that the band gap on InN is lower than previously though and also due to other unique material properties, such as the strong polarization and affiliation piezoelectric effects. Several key issues remain, including p-type doping, which substrates to use, and the material quality of the layers. Results show that the material quality of existing films allows a 5 stack tandem at 500X to approach 60%. Results also show InN grown on Ge with a crystalline Al interlayer, which could be used to replace a tunnel contact. High band gap GaN p-i-n and InGaN/GaN quantum dot solar cells show good spectral response and Voc > 2V. 2013-10-21T07:14:31Z 2013-10-21T07:14:31Z 2012-06-18 Working Paper p. 1130 - 1132 978-967-5760-11-2 http://hdl.handle.net/123456789/29017 en Proceedings of the The 2nd International Malaysia-Ireland Joint Symposium on Engineering, Science and Business 2012 (IMiEJS2012); Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Quantum dot
Solar cells
Heterostructure
InN
Efficiency
spellingShingle Quantum dot
Solar cells
Heterostructure
InN
Efficiency
Humayun, M. A.
Mohd Abdur, Rashid, Dr.
Mohd Fareq, Abd Malek, Prof. Madya Dr.
A. N., Hussain
Ismail, Daut, Prof. Dr.
Efficiency enhancement of InN quantum dot based solar cell
description The 2nd International Malaysia-Ireland Joint Symposium on Engineering, Science and Business 2012 (IMiEJS2012) jointly organized by Universiti Malaysia Perlis and Athlone Institute of Technology in collaboration with The Ministry of Higher Education (MOHE) Malaysia, Education Malaysia and Malaysia Postgraduates Student Association Ireland (MyPSI), 18th - 19th June 2012 at Putra World Trade Center (PWTC), Kuala Lumpur, Malaysia.
author2 humayun0403063@gmail.com
author_facet humayun0403063@gmail.com
Humayun, M. A.
Mohd Abdur, Rashid, Dr.
Mohd Fareq, Abd Malek, Prof. Madya Dr.
A. N., Hussain
Ismail, Daut, Prof. Dr.
format Working Paper
author Humayun, M. A.
Mohd Abdur, Rashid, Dr.
Mohd Fareq, Abd Malek, Prof. Madya Dr.
A. N., Hussain
Ismail, Daut, Prof. Dr.
author_sort Humayun, M. A.
title Efficiency enhancement of InN quantum dot based solar cell
title_short Efficiency enhancement of InN quantum dot based solar cell
title_full Efficiency enhancement of InN quantum dot based solar cell
title_fullStr Efficiency enhancement of InN quantum dot based solar cell
title_full_unstemmed Efficiency enhancement of InN quantum dot based solar cell
title_sort efficiency enhancement of inn quantum dot based solar cell
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2013
url http://dspace.unimap.edu.my/xmlui/handle/123456789/29017
_version_ 1643795646872813568
score 13.222552

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