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Characteristics of nanostructure silicon photodiode using laser assisted etching

Malaysian Technical Universities Conference on Engineering and Technology (MUCET) 2012 organised by technical universities under the Malaysian Technical Universities Network (MTUN), 20th - 21st November 2012 at Hotel Seri Malaysia, Kangar, Perlis.

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Bibliographic Details
Main Authors: Ahmed, Naser M., Yarub, Al-Douri, Assoc. Prof. Dr., Alwan, Alwan M., Jabbar, Allaa A., Arif, Ghassan E.
Other Authors: yarub@unimap.edu.my
Format: Working Paper
Language:English
Published: Malaysian Technical Universities Network (MTUN) 2013
Subjects:
Nanostructures silicon photodiode (nPSi)
Photodiode
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/26995
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spelling my.unimap-269952013-07-23T07:08:39Z Characteristics of nanostructure silicon photodiode using laser assisted etching Ahmed, Naser M. Yarub, Al-Douri, Assoc. Prof. Dr. Alwan, Alwan M. Jabbar, Allaa A. Arif, Ghassan E. yarub@unimap.edu.my ghasanarif@yahoo.com Nanostructures silicon photodiode (nPSi) Photodiode Malaysian Technical Universities Conference on Engineering and Technology (MUCET) 2012 organised by technical universities under the Malaysian Technical Universities Network (MTUN), 20th - 21st November 2012 at Hotel Seri Malaysia, Kangar, Perlis. We prepared nanostructures silicon photodiode (nPSi) by using laser assisted etching at fixed current density (30 mA/cm2) with different etching wavelengths of laser diode (532,650 and 810 nm), a (metal/nanostructure silicon/metal) photodiode has been fabricated from rapid thermal oxidation (RTO) and rapid thermal annealing (RTA) processes to improve the characterizations of PSi photodiode, A responsivity of (3A/w) was measured at (450 nm) with low value of dark current (1.33 μA/cm) and higher value of photo current (610 μA/cm2) at 5 volt reverse bias. The results show that the wavelength IR (810 nm) give us the best photodiode and electrical characteristics. 2013-07-23T07:08:39Z 2013-07-23T07:08:39Z 2012-11-20 Working Paper p.157-161 http://hdl.handle.net/123456789/26995 en Malaysian Technical Universities Network (MTUN)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Nanostructures silicon photodiode (nPSi)
Photodiode
spellingShingle Nanostructures silicon photodiode (nPSi)
Photodiode
Ahmed, Naser M.
Yarub, Al-Douri, Assoc. Prof. Dr.
Alwan, Alwan M.
Jabbar, Allaa A.
Arif, Ghassan E.
Characteristics of nanostructure silicon photodiode using laser assisted etching
description Malaysian Technical Universities Conference on Engineering and Technology (MUCET) 2012 organised by technical universities under the Malaysian Technical Universities Network (MTUN), 20th - 21st November 2012 at Hotel Seri Malaysia, Kangar, Perlis.
author2 yarub@unimap.edu.my
author_facet yarub@unimap.edu.my
Ahmed, Naser M.
Yarub, Al-Douri, Assoc. Prof. Dr.
Alwan, Alwan M.
Jabbar, Allaa A.
Arif, Ghassan E.
format Working Paper
author Ahmed, Naser M.
Yarub, Al-Douri, Assoc. Prof. Dr.
Alwan, Alwan M.
Jabbar, Allaa A.
Arif, Ghassan E.
author_sort Ahmed, Naser M.
title Characteristics of nanostructure silicon photodiode using laser assisted etching
title_short Characteristics of nanostructure silicon photodiode using laser assisted etching
title_full Characteristics of nanostructure silicon photodiode using laser assisted etching
title_fullStr Characteristics of nanostructure silicon photodiode using laser assisted etching
title_full_unstemmed Characteristics of nanostructure silicon photodiode using laser assisted etching
title_sort characteristics of nanostructure silicon photodiode using laser assisted etching
publisher Malaysian Technical Universities Network (MTUN)
publishDate 2013
url http://dspace.unimap.edu.my/xmlui/handle/123456789/26995
_version_ 1643795016416493568
score 13.211869

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