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IR-induced features of AgGaGeS 4 crystalline semiconductors

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Main Authors: Davydyuk, G.Y., Myronchuk, G.L., Lakshminarayana, G., Yakymchuk, O.V.a, Reshak, A.H., Wojciechowski, A., Rakus, P,, Alzayed, N., Chmiel, K M., Kityk, I.V., Parasyuk, O.V.
Other Authors: glnphysics@rediffmail.com
Format: Article
Language:English
Published: Elsevier Ltd. 2013
Subjects:
Chalcogenides
Optical materials
Crystal growth
Phonons
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/25640
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spelling my.unimap-256402013-06-10T07:44:42Z IR-induced features of AgGaGeS 4 crystalline semiconductors Davydyuk, G.Y. Myronchuk, G.L. Lakshminarayana, G. Yakymchuk, O.V.a Reshak, A.H. Wojciechowski, A. Rakus, P, Alzayed, N. Chmiel, K M. Kityk, I.V. Parasyuk, O.V. glnphysics@rediffmail.com Chalcogenides Optical materials Crystal growth Phonons Link to publisher's homepage at http://www.elsevier.com Complex investigations of the photoconductivity and photoinduced absorption together with the piezoelectric features were performed for the AgGaGeS 4 semiconducting single crystals under the influence of 3.5 μs CO 2 (80 mJ) pulsed laser emitting at 10.6 μm. These crystals are transparent in the wide spectral range 0.417 μm, which allows operating due to their properties in the spectral range covering the excitation of the phonons and electron subsystem. The piezoelectric properties show substantial increment during illumination by microsecond CO 2 laser and irreversible relaxation after swathing off the laser excitation. The temperature dependent studies of absorption and photoconductivity confirm the main role of intrinsic defects forming the tails of electronic states below the bottom of conduction band gap. Principal role of IR-induced electronphonon interactions in the observed changes of the piezoelectricity is demonstrated. 2013-06-10T07:44:42Z 2013-06-10T07:44:42Z 2012-03 Article Journal of Physics and Chemistry of Solids, vol. 73, (3), 2012, pages 439-443 0022-3697 http://www.journals.elsevier.com/journal-of-physics-and-chemistry-of-solids/ http://hdl.handle.net/123456789/25640 en Elsevier Ltd.
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Chalcogenides
Optical materials
Crystal growth
Phonons
spellingShingle Chalcogenides
Optical materials
Crystal growth
Phonons
Davydyuk, G.Y.
Myronchuk, G.L.
Lakshminarayana, G.
Yakymchuk, O.V.a
Reshak, A.H.
Wojciechowski, A.
Rakus, P,
Alzayed, N.
Chmiel, K M.
Kityk, I.V.
Parasyuk, O.V.
IR-induced features of AgGaGeS 4 crystalline semiconductors
description Link to publisher's homepage at http://www.elsevier.com
author2 glnphysics@rediffmail.com
author_facet glnphysics@rediffmail.com
Davydyuk, G.Y.
Myronchuk, G.L.
Lakshminarayana, G.
Yakymchuk, O.V.a
Reshak, A.H.
Wojciechowski, A.
Rakus, P,
Alzayed, N.
Chmiel, K M.
Kityk, I.V.
Parasyuk, O.V.
format Article
author Davydyuk, G.Y.
Myronchuk, G.L.
Lakshminarayana, G.
Yakymchuk, O.V.a
Reshak, A.H.
Wojciechowski, A.
Rakus, P,
Alzayed, N.
Chmiel, K M.
Kityk, I.V.
Parasyuk, O.V.
author_sort Davydyuk, G.Y.
title IR-induced features of AgGaGeS 4 crystalline semiconductors
title_short IR-induced features of AgGaGeS 4 crystalline semiconductors
title_full IR-induced features of AgGaGeS 4 crystalline semiconductors
title_fullStr IR-induced features of AgGaGeS 4 crystalline semiconductors
title_full_unstemmed IR-induced features of AgGaGeS 4 crystalline semiconductors
title_sort ir-induced features of aggages 4 crystalline semiconductors
publisher Elsevier Ltd.
publishDate 2013
url http://dspace.unimap.edu.my/xmlui/handle/123456789/25640
_version_ 1643794634492608512
score 13.222552

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