Swift heavy ion effects in gallium nitride
Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008.
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Universiti Malaysia Perlis
2008
|
| Subjects: | |
| Online Access: | http://dspace.unimap.edu.my/xmlui/handle/123456789/2370 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| id |
my.unimap-2370 |
|---|---|
| record_format |
dspace |
| spelling |
my.unimap-23702008-10-18T03:30:35Z Swift heavy ion effects in gallium nitride Mansouri, S. Marie, P. Dufour, C. Nouet, G. Monnet, I. Lebius, H. Benamara, Z. Al-Douri, Y. GAN AFM Threshold energy Gallium nitride Atomic force microscopy Nitride semiconductors Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008. GaN layers were irradiated at room temperature with swift heavy ions. AFM (atomic force microscopy) images of specimens irradiated under grazing incidence show tracks. With 74 MeV Kr, the contrast is very faint unlike for 92 MeV Xe and 104 MeV Pb. This behavior indicates that the electronic energy loss threshold to produce tracks at grazing incidence is around 17keV/nm. These tracks consist of two parts, one with a rather homogeneous contrast, and a second with regularly spaced dots. Measurements in the bulk region after irradiation with 132 MeV Pb ions show tracks with a diameter of about 3 nm. 2008-10-10T03:35:25Z 2008-10-10T03:35:25Z 2008 Article International Journal of Nanoelectronics and Materials, vol. 1 (1), 2008, pages101-106. 1985-5761 (Printed) 1997-4434 (Online) http://www.unimap.edu.my http://hdl.handle.net/123456789/2370 en Universiti Malaysia Perlis |
| institution |
Universiti Malaysia Perlis |
| building |
UniMAP Library |
| collection |
Institutional Repository |
| continent |
Asia |
| country |
Malaysia |
| content_provider |
Universiti Malaysia Perlis |
| content_source |
UniMAP Library Digital Repository |
| url_provider |
http://dspace.unimap.edu.my/ |
| language |
English |
| topic |
GAN AFM Threshold energy Gallium nitride Atomic force microscopy Nitride semiconductors |
| spellingShingle |
GAN AFM Threshold energy Gallium nitride Atomic force microscopy Nitride semiconductors Mansouri, S. Marie, P. Dufour, C. Nouet, G. Monnet, I. Lebius, H. Benamara, Z. Al-Douri, Y. Swift heavy ion effects in gallium nitride |
| description |
Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008. |
| format |
Article |
| author |
Mansouri, S. Marie, P. Dufour, C. Nouet, G. Monnet, I. Lebius, H. Benamara, Z. Al-Douri, Y. |
| author_facet |
Mansouri, S. Marie, P. Dufour, C. Nouet, G. Monnet, I. Lebius, H. Benamara, Z. Al-Douri, Y. |
| author_sort |
Mansouri, S. |
| title |
Swift heavy ion effects in gallium nitride |
| title_short |
Swift heavy ion effects in gallium nitride |
| title_full |
Swift heavy ion effects in gallium nitride |
| title_fullStr |
Swift heavy ion effects in gallium nitride |
| title_full_unstemmed |
Swift heavy ion effects in gallium nitride |
| title_sort |
swift heavy ion effects in gallium nitride |
| publisher |
Universiti Malaysia Perlis |
| publishDate |
2008 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/2370 |
| _version_ |
1643787590562742272 |
| score |
13.222552 |