Optical properties of Si quantum dot potential under pressure effect
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my.unimap-229392013-01-11T02:43:34Z Optical properties of Si quantum dot potential under pressure effect Yarub, Al - Douri yarub@unimap.edu.my Optical properties Pressure effect Quantum-dot Link to publisher's homepage at www.ttp.net/ Further study of the quantum dot potential under hydrostatic pressure for Si is presented. This potential has been calculated by means of our recent empirical model. The indirect energy gap (Γ-X) is calculated using the full potential-linearized augmented plane wave (FP-LAPW) method. The Engel-Vosko generalized gradient approximation (EV-GGA) formalism is used to optimize the corresponding potential for energetic transition and optical properties calculations of Si. The refractive index and transverse effective charge are predicted under pressure effect. The pressure effect is used to test the validity of our model. The results are compared with others and showed reasonable agreement. 2013-01-11T02:43:34Z 2013-01-11T02:43:34Z 2012 Article Advanced Materials Research, vol. 545, 2012, pages 32-37 1022-6680 http://www.scientific.net/AMR.545.32 http://hdl.handle.net/123456789/22939 en Trans Tech Publications, Switzerland. |
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Optical properties Pressure effect Quantum-dot Yarub, Al - Douri Optical properties of Si quantum dot potential under pressure effect |
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Yarub, Al - Douri |
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Optical properties of Si quantum dot potential under pressure effect |
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Optical properties of Si quantum dot potential under pressure effect |
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Optical properties of Si quantum dot potential under pressure effect |
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Optical properties of Si quantum dot potential under pressure effect |
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Optical properties of Si quantum dot potential under pressure effect |
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optical properties of si quantum dot potential under pressure effect |
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Trans Tech Publications, Switzerland. |
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2013 |
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http://dspace.unimap.edu.my/xmlui/handle/123456789/22939 |
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