Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively

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Main Author: Anas Redzuan, Mokhtar
Other Authors: Noraini Othman (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1975
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spelling my.unimap-19752009-04-16T03:40:46Z Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively Anas Redzuan, Mokhtar Noraini Othman (Advisor) Computer-aided design NMOS transistor Transistors Negative metal oxide semiconductors (NMOS) Integrated circuits Metal oxide semiconductors Semiconductors Access is limited to UniMAP community. This project is about the usage of Technology Computer Aided Design (TCAD) in order to construct NMOS transistor with gate length 0.13 µm. TCAD is use in computer simulation as process modelling and device operation. This Final Year Project report discuss about the Synopsys Taurus TCAD in order to develop and simulate the fabrication process and electrical chracteristic for 0.13 µm NMOS transistor in complete process flow. This project also discuss about electrical characteristic for 0.13 µm retrograde well NMOS transistor dan halo implant. The result for this project are analyze and compare between theoritical and experiment. The objectives of this project are to simulate a 0.13 µm NMOS transistor using TCAD and to study the characteristic of conventional NMOS transistor, Retrograde well and Halo implant structure respectively. TSUPREM4 is used for process simulation while MEDICI is used for device simulation. This project methodology starts from a process flow and recipes development. Then the modules in the Taurus Workbench will be written based on the recipes. The process simulation is run by using TSUPREM4. This process will be continuing until we get the expected output. From process simulation, we can obtain the output such as 2D structure, mesh and doping profile for the device. To get the current-voltage characteristic, we need to run the device simulation by using MEDICI. The result obtained is in the form of I-V caracteristic curve. The study of the IV characterization consist of Ids, Vgs, Vds and Vths. All this parameter is study both from I-V caracterization curve and MEDICI parameter extract. 2008-09-07T03:41:29Z 2008-09-07T03:41:29Z 2008-03 Learning Object http://hdl.handle.net/123456789/1975 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Computer-aided design
NMOS transistor
Transistors
Negative metal oxide semiconductors (NMOS)
Integrated circuits
Metal oxide semiconductors
Semiconductors
spellingShingle Computer-aided design
NMOS transistor
Transistors
Negative metal oxide semiconductors (NMOS)
Integrated circuits
Metal oxide semiconductors
Semiconductors
Anas Redzuan, Mokhtar
Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
description Access is limited to UniMAP community.
author2 Noraini Othman (Advisor)
author_facet Noraini Othman (Advisor)
Anas Redzuan, Mokhtar
format Learning Object
author Anas Redzuan, Mokhtar
author_sort Anas Redzuan, Mokhtar
title Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
title_short Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
title_full Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
title_fullStr Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
title_full_unstemmed Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively
title_sort electrical characterization of 0.13 µm nmos transistor with retrograde well and halo implant structure respectively
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1975
_version_ 1643787510327803904
score 13.214268