Recombination activity of contaminated dislocations in silicon: a model describing electron-beam-induced current contrast behavior

• Main Authors: Kveder, V., Kittler, M., Schroter, W.
• Format: Article
• Language: English
• Published: The American Physical Society 2008
• Subjects: Molecular dynamics; Silicon; Electron beams; Atoms
• Online Access: http://dspace.unimap.edu.my/xmlui/handle/123456789/1489

Existing experimental data give many evidences that the recombination rate of minority charge carriers at dislocations in silicon depends strongly on dislocation decoration by transition metal impurities. Here, we present a model that allows a quantitative description of the recombination of minorit...