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Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories

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Bibliographic Details
Main Author: Zainab Ramli
Other Authors: Syarifah Norfaezah Sabki (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
CMOS transistors
Ion trajectories
Monte Carlo method
Old Monte Carlo method
Bipolar transistors
Semiconductor technology
Integrated circuits
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1364
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spelling my.unimap-13642008-10-15T03:34:35Z Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories Zainab Ramli Syarifah Norfaezah Sabki (Advisor) CMOS transistors Ion trajectories Monte Carlo method Old Monte Carlo method Bipolar transistors Semiconductor technology Integrated circuits Access is limited to UniMAP community. The goal of simulating the ion implantation is to predict the distribution of implanted ions in the target and also to predict the amount of damage generated in the target. During ion implantation process, accelerated ions penetrate the surface of the wafer and come to rest in its interior after losing energy through interactions with the nuclei and electrons of the target. This simulation of ion implantation for ion trajectories is divided into three diffusion models which they are Default Model, Monte Carlo (MC) Model and Old Monte Carlo (OMC) Model. The software used to simulate the result is TSUPREM4. To compare the difference between these three models, different implantation energies and numbers of ions trajectories are used to investigate the behavior of dopant, interstitials, vacancies and clustering. Two special structures are built in this project in which one of the structures is implanted at the upper left side and another one is implanted at the upper middle of the structure. As the result, the more ion trajectories are used in the simulation using Monte Carlo method, the more accurate is the result and the higher the implantation energy, the deeper ions can penetrate into the substrate. At the end of the work, it is expected that the investigation on ion trajectories could lead to the improvement of device simulation especially in bipolar and CMOS transistors before a realistic device can be fabricated. 2008-07-02T07:13:37Z 2008-07-02T07:13:37Z 2007-04 Learning Object http://hdl.handle.net/123456789/1364 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic CMOS transistors
Ion trajectories
Monte Carlo method
Old Monte Carlo method
Bipolar transistors
Semiconductor technology
Integrated circuits
spellingShingle CMOS transistors
Ion trajectories
Monte Carlo method
Old Monte Carlo method
Bipolar transistors
Semiconductor technology
Integrated circuits
Zainab Ramli
Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories
description Access is limited to UniMAP community.
author2 Syarifah Norfaezah Sabki (Advisor)
author_facet Syarifah Norfaezah Sabki (Advisor)
Zainab Ramli
format Learning Object
author Zainab Ramli
author_sort Zainab Ramli
title Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories
title_short Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories
title_full Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories
title_fullStr Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories
title_full_unstemmed Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories
title_sort simulation of ion implantation using monte carlo method for investigation on ion trajectories
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1364
_version_ 1643787267132620800
score 13.214268

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