Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
In past decades, silicon is commonly used in the semiconductor industry. Recently, researcher extensively studied the porous silicon produced by electrochemical etching because there is possibility to develop a new approach in developing optoelectronic devices, solar cell and sensor. In this researc...
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Terengganu: Universiti Malaysia Terengganu
2014
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my.umt.ir-30102014-05-18T06:43:31Z Surface morphology, optical and electrical properties of porous silicon produced by chemical etching Tham, Dwight Jern Ee QC 6118 .S5 T4 2011 Tham, Dwight Jern Ee Tesis FST 2011 Porous silicon In past decades, silicon is commonly used in the semiconductor industry. Recently, researcher extensively studied the porous silicon produced by electrochemical etching because there is possibility to develop a new approach in developing optoelectronic devices, solar cell and sensor. In this research, the Porous Silicon (PS) was fabricated by chemical etching method on the P-type silicon wafer in the mixture of hydrofluoric acid (HF) etchant with different concentration of nitric acid(HN03) of 20%, 40%, 65% and at different etching time of 5, 10, 15, 20, 25 minutes. 2014-05-18T06:43:31Z 2014-05-18T06:43:31Z 2011-09 Thesis http://dspace.psnz.umt.edu.my/xmlui/handle/123456789/3010 en application/pdf application/pdf Terengganu: Universiti Malaysia Terengganu |
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QC 6118 .S5 T4 2011 Tham, Dwight Jern Ee Tesis FST 2011 Porous silicon Tham, Dwight Jern Ee Surface morphology, optical and electrical properties of porous silicon produced by chemical etching |
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In past decades, silicon is commonly used in the semiconductor industry. Recently, researcher extensively studied the porous silicon produced by electrochemical etching because there is possibility to develop a new approach in developing optoelectronic devices, solar cell and sensor. In this research, the Porous Silicon (PS) was fabricated by chemical etching method on the P-type silicon wafer in the mixture of hydrofluoric acid (HF) etchant with different concentration of nitric acid(HN03) of 20%, 40%, 65% and at different etching time of 5, 10, 15, 20, 25 minutes. |
format |
Thesis |
author |
Tham, Dwight Jern Ee |
author_facet |
Tham, Dwight Jern Ee |
author_sort |
Tham, Dwight Jern Ee |
title |
Surface morphology, optical and electrical properties of porous silicon produced by chemical etching |
title_short |
Surface morphology, optical and electrical properties of porous silicon produced by chemical etching |
title_full |
Surface morphology, optical and electrical properties of porous silicon produced by chemical etching |
title_fullStr |
Surface morphology, optical and electrical properties of porous silicon produced by chemical etching |
title_full_unstemmed |
Surface morphology, optical and electrical properties of porous silicon produced by chemical etching |
title_sort |
surface morphology, optical and electrical properties of porous silicon produced by chemical etching |
publisher |
Terengganu: Universiti Malaysia Terengganu |
publishDate |
2014 |
url |
http://dspace.psnz.umt.edu.my/xmlui/handle/123456789/3010 |
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1738395525036638208 |
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13.214268 |