Surface morphology, optical and electrical properties of porous silicon produced by chemical etching

In past decades, silicon is commonly used in the semiconductor industry. Recently, researcher extensively studied the porous silicon produced by electrochemical etching because there is possibility to develop a new approach in developing optoelectronic devices, solar cell and sensor. In this researc...

Full description

Saved in:
Bibliographic Details
Main Author: Tham, Dwight Jern Ee
Format: Thesis
Language:English
Published: Terengganu: Universiti Malaysia Terengganu 2014
Subjects:
Online Access:http://dspace.psnz.umt.edu.my/xmlui/handle/123456789/3010
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.umt.ir-3010
record_format eprints
spelling my.umt.ir-30102014-05-18T06:43:31Z Surface morphology, optical and electrical properties of porous silicon produced by chemical etching Tham, Dwight Jern Ee QC 6118 .S5 T4 2011 Tham, Dwight Jern Ee Tesis FST 2011 Porous silicon In past decades, silicon is commonly used in the semiconductor industry. Recently, researcher extensively studied the porous silicon produced by electrochemical etching because there is possibility to develop a new approach in developing optoelectronic devices, solar cell and sensor. In this research, the Porous Silicon (PS) was fabricated by chemical etching method on the P-type silicon wafer in the mixture of hydrofluoric acid (HF) etchant with different concentration of nitric acid(HN03) of 20%, 40%, 65% and at different etching time of 5, 10, 15, 20, 25 minutes. 2014-05-18T06:43:31Z 2014-05-18T06:43:31Z 2011-09 Thesis http://dspace.psnz.umt.edu.my/xmlui/handle/123456789/3010 en application/pdf application/pdf Terengganu: Universiti Malaysia Terengganu
institution Universiti Malaysia Terengganu
building Perpustakaan Sultanah Nur Zahirah
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Terengganu
content_source UMT-IR
url_provider http://umt-ir.umt.edu.my:8080/
language English
topic QC 6118 .S5 T4 2011
Tham, Dwight Jern Ee
Tesis FST 2011
Porous silicon
spellingShingle QC 6118 .S5 T4 2011
Tham, Dwight Jern Ee
Tesis FST 2011
Porous silicon
Tham, Dwight Jern Ee
Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
description In past decades, silicon is commonly used in the semiconductor industry. Recently, researcher extensively studied the porous silicon produced by electrochemical etching because there is possibility to develop a new approach in developing optoelectronic devices, solar cell and sensor. In this research, the Porous Silicon (PS) was fabricated by chemical etching method on the P-type silicon wafer in the mixture of hydrofluoric acid (HF) etchant with different concentration of nitric acid(HN03) of 20%, 40%, 65% and at different etching time of 5, 10, 15, 20, 25 minutes.
format Thesis
author Tham, Dwight Jern Ee
author_facet Tham, Dwight Jern Ee
author_sort Tham, Dwight Jern Ee
title Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
title_short Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
title_full Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
title_fullStr Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
title_full_unstemmed Surface morphology, optical and electrical properties of porous silicon produced by chemical etching
title_sort surface morphology, optical and electrical properties of porous silicon produced by chemical etching
publisher Terengganu: Universiti Malaysia Terengganu
publishDate 2014
url http://dspace.psnz.umt.edu.my/xmlui/handle/123456789/3010
_version_ 1738395525036638208
score 13.214268