Numerical study of nSi and nSiGe solar cells: Emerging microstructure nSiGe cell achieved the highest 8.55% efficiency
This paper reports about the comparative study of nSi and nSiGe microstructure materials opto-electrical energy conversion prospect. The significance of nSiGe thin active laye in organic-inorganic heterojunction (HJ) solar cell efficiency progression is illustrated. Transparent and carrier selective...
Saved in:
Main Authors: | , , , , , |
---|---|
Format: | Article |
Language: | English English |
Published: |
Elsevier B.V.
2022
|
Subjects: | |
Online Access: | https://eprints.ums.edu.my/id/eprint/34142/4/Full-text.pdf https://eprints.ums.edu.my/id/eprint/34142/7/Abstract.pdf https://eprints.ums.edu.my/id/eprint/34142/ https://www.sciencedirect.com/science/article/pii/S0925346722005730?via%3Dihub https://doi.org/10.1016/j.optmat.2022.112539 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
id |
my.ums.eprints.34142 |
---|---|
record_format |
eprints |
spelling |
my.ums.eprints.341422022-09-26T00:43:28Z https://eprints.ums.edu.my/id/eprint/34142/ Numerical study of nSi and nSiGe solar cells: Emerging microstructure nSiGe cell achieved the highest 8.55% efficiency Bablu K Ghosh Syafiqa Nasir Fuei Pien Chee Soumyaranjan Routray Ismail Saad K.A. Mohamad TK1-9971 Electrical engineering. Electronics. Nuclear engineering This paper reports about the comparative study of nSi and nSiGe microstructure materials opto-electrical energy conversion prospect. The significance of nSiGe thin active laye in organic-inorganic heterojunction (HJ) solar cell efficiency progression is illustrated. Transparent and carrier selective top contact purposes p-type un-doped organic materials are promising for low processing cost n-Si HJ solar cell. Near infrared band absorption enrichment by Ge inclusion in n-Si thin active layer is a new design approach. p-PTAA/n-Si PV device modelling and it electrical properties are investigated by using SCAPS simulator. Thin Si active layer solar cell is commercially important. However, thin layer absorption related technological shortcoming overcoming approaches 10% Ge content impact is studied in this work. Moreover, SiO2 nanomaterial passivated p-PTAA/SiO2/ n-SiGe and p-PTAA/SiO2/n-Si models active layer thickness and operating temperature effects have also been studied. The current-voltage (J-V) characteristics analysis is realized that nSiGe cell is potential for the progression of current density and efficiency. SiO2 nanomaterial passivated 3 μm SiGe microstructure cell is realized promising to increase 48.1 mA/cm2 of current density. The highest 8.55% efficiency is achieved for 2 nm SiO2 passivation and 20 nm of PTAA emitter. Elsevier B.V. 2022-06-03 Article PeerReviewed text en https://eprints.ums.edu.my/id/eprint/34142/4/Full-text.pdf text en https://eprints.ums.edu.my/id/eprint/34142/7/Abstract.pdf Bablu K Ghosh and Syafiqa Nasir and Fuei Pien Chee and Soumyaranjan Routray and Ismail Saad and K.A. Mohamad (2022) Numerical study of nSi and nSiGe solar cells: Emerging microstructure nSiGe cell achieved the highest 8.55% efficiency. Optical Materials, 129. pp. 1-6. ISSN 0925-3467 https://www.sciencedirect.com/science/article/pii/S0925346722005730?via%3Dihub https://doi.org/10.1016/j.optmat.2022.112539 |
institution |
Universiti Malaysia Sabah |
building |
UMS Library |
collection |
Institutional Repository |
continent |
Asia |
country |
Malaysia |
content_provider |
Universiti Malaysia Sabah |
content_source |
UMS Institutional Repository |
url_provider |
http://eprints.ums.edu.my/ |
language |
English English |
topic |
TK1-9971 Electrical engineering. Electronics. Nuclear engineering |
spellingShingle |
TK1-9971 Electrical engineering. Electronics. Nuclear engineering Bablu K Ghosh Syafiqa Nasir Fuei Pien Chee Soumyaranjan Routray Ismail Saad K.A. Mohamad Numerical study of nSi and nSiGe solar cells: Emerging microstructure nSiGe cell achieved the highest 8.55% efficiency |
description |
This paper reports about the comparative study of nSi and nSiGe microstructure materials opto-electrical energy conversion prospect. The significance of nSiGe thin active laye in organic-inorganic heterojunction (HJ) solar cell efficiency progression is illustrated. Transparent and carrier selective top contact purposes p-type un-doped organic materials are promising for low processing cost n-Si HJ solar cell. Near infrared band absorption enrichment by Ge inclusion in n-Si thin active layer is a new design approach. p-PTAA/n-Si PV device modelling and it electrical properties are investigated by using SCAPS simulator. Thin Si active layer solar cell is commercially important. However, thin layer absorption related technological shortcoming overcoming approaches 10% Ge content impact is studied in this work. Moreover, SiO2 nanomaterial passivated p-PTAA/SiO2/ n-SiGe and p-PTAA/SiO2/n-Si models active layer thickness and operating temperature effects have also been studied. The current-voltage (J-V) characteristics analysis is realized that nSiGe cell is potential for the progression of current density and efficiency. SiO2 nanomaterial passivated 3 μm SiGe microstructure cell is realized promising to increase 48.1 mA/cm2 of current density. The highest 8.55% efficiency is achieved for 2 nm SiO2 passivation and 20 nm of PTAA emitter. |
format |
Article |
author |
Bablu K Ghosh Syafiqa Nasir Fuei Pien Chee Soumyaranjan Routray Ismail Saad K.A. Mohamad |
author_facet |
Bablu K Ghosh Syafiqa Nasir Fuei Pien Chee Soumyaranjan Routray Ismail Saad K.A. Mohamad |
author_sort |
Bablu K Ghosh |
title |
Numerical study of nSi and nSiGe solar cells: Emerging microstructure nSiGe cell achieved the highest 8.55% efficiency |
title_short |
Numerical study of nSi and nSiGe solar cells: Emerging microstructure nSiGe cell achieved the highest 8.55% efficiency |
title_full |
Numerical study of nSi and nSiGe solar cells: Emerging microstructure nSiGe cell achieved the highest 8.55% efficiency |
title_fullStr |
Numerical study of nSi and nSiGe solar cells: Emerging microstructure nSiGe cell achieved the highest 8.55% efficiency |
title_full_unstemmed |
Numerical study of nSi and nSiGe solar cells: Emerging microstructure nSiGe cell achieved the highest 8.55% efficiency |
title_sort |
numerical study of nsi and nsige solar cells: emerging microstructure nsige cell achieved the highest 8.55% efficiency |
publisher |
Elsevier B.V. |
publishDate |
2022 |
url |
https://eprints.ums.edu.my/id/eprint/34142/4/Full-text.pdf https://eprints.ums.edu.my/id/eprint/34142/7/Abstract.pdf https://eprints.ums.edu.my/id/eprint/34142/ https://www.sciencedirect.com/science/article/pii/S0925346722005730?via%3Dihub https://doi.org/10.1016/j.optmat.2022.112539 |
_version_ |
1760231255620714496 |
score |
13.15806 |