Electrical characterization and source-drain voltage dependent mobility of P-channel organic field-effect transistors using MATLAB simulation

• Main Authors: Umar Farok, Yona Falinie, Afishah Alias, Bablu Kumar Ghosh, Ismail Saad, Ahmad Mukifza Harun, Khairul Anuar Mohamad
• Format: Conference or Workshop Item
• Language: English; English
• Published: 2014
• Subjects: TK7885-7895 Computer engineering. Computer hardware
• Online Access: https://eprints.ums.edu.my/id/eprint/30306/1/Electrical%20characterization%20and%20source-drain%20voltage%20dependent%20mobility%20of%20P-channel%20organic%20field-effect%20transistors%20using%20MATLAB%20simulation%20ABSTRACT.pdf; https://eprints.ums.edu.my/id/eprint/30306/2/Electrical%20characterization%20and%20source-drain%20voltage%20dependent%20mobility%20of%20P-channel%20organic%20field-effect%20transistors%20using%20MATLAB%20simulation%20FULL%20TEXT.pdf; https://eprints.ums.edu.my/id/eprint/30306/; https://ieeexplore.ieee.org/abstract/document/6959961/authors#authors

We demonstrate fabrication of bottom gate/top source-drain contacts for p-channel (small molecule) organic field-effect transistor (OFET) using pentacene as an active semiconductor layer and silicon dioxide (SiO2) as gate dielectric. The device exhibits a typical output curve of a field-effect transistor (FET). Furthermore, analysis of electrical characterization was done to investigate the source-drain voltage (Vds) dependent mobility. The mobility which calculated using MATLAB simulation exhibited a range from 0.0234 to 0.0258 cm2/Vs with increasing source-drain voltage (average mobility was 0.0254 cm2/Vs). This work suggests that the mobility increase with increasing source-drain voltage similar to the gate voltage dependent mobility phenomenon.