Radiation damage effects on zinc oxide (ZnO) based semiconductor devices– a review

• Main Authors: Rosfayanti Rasmidi, Mivolil Duinong, Chee, Fuei Pien
• Format: Article
• Language: English; English
• Published: Elsevier Ltd. 2021
• Subjects: QC Physics; TK Electrical engineering. Electronics Nuclear engineering
• Online Access: https://eprints.ums.edu.my/id/eprint/30095/1/Radiation%20damage%20effects%20on%20zinc%20oxide%20%28ZnO%29%20based%20semiconductor%20devices%E2%80%93%20a%20review%20ABSTRACT.pdf; https://eprints.ums.edu.my/id/eprint/30095/3/Radiation%20damage%20effects%20on%20zinc%20oxide%20%28ZnO%29%20based%20semiconductor%20devices%E2%80%93%20a%20review%20FULL%20TEXT.pdf; https://eprints.ums.edu.my/id/eprint/30095/; https://www.sciencedirect.com/science/article/pii/S0969806X21001055?casa_token=4uyMy5OuHaYAAAAA:TeHzGjgtUblFxQZmeaixwmtEN7uIr7syU8d1dKETGjRNlVNpUkgHiqxpGk78-Nmt9ex0kZvesHX-; https://doi.org/10.1016/j.radphyschem.2021.109455

In space, semiconductor devices are vulnerable to various effect of high energy radiation, causing single event upsets (SEUs), damaging or altering the lattice structure of the semiconductor device. The effect of ionizing radiation on metal oxide semiconductor device had been receiving very little a...