Enhanced reliability of vertical strained impact ionization MOSFET incorporating dielectric pocket for ultra-sensitive biosensor applications

• Main Authors: Ismail Saad, Mohd Zuhir Hamzah, Andee Hazwani Syazana Bacho, C., Bun Seng, A. M. Khairul, Bablu K. Ghosh, Nurmin Bolong
• Format: Article
• Language: English
• Published: American Scientific Publishers 2017
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: https://eprints.ums.edu.my/id/eprint/19595/1/Enhanced%20reliability%20of%20vertical.pdf; https://eprints.ums.edu.my/id/eprint/19595/; https://doi.org/10.1166/asl.2017.10260

Fast switching with an enhanced reliability device structure of Vertical Strained Impact Ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) has been successfully design, simulated and analyzed in this paper. Ultra-low power with low subthreshold swing (S) and high breakdown voltage are i...