Modeling and simulation of metal organic halide vapor phase epitaxy growth chamber reactor / Nurul Zieyana Mohamed Annuar
Over the last few decades, there was a substantial appeal on the growth of galliumnitride (Ga-N) based alloy for high performance optoelectronic devices such as blue/violet laser diode (LD), blue/white light emitting diode (LED) etc. In the recent years, there have been revolutionary changes in s...
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| Format: | Thesis |
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2013
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| Online Access: | http://studentsrepo.um.edu.my/8652/4/modeling_and_simulation_of_metal_organic_halide_vapor_phase_epitaxy_growth_chamber_reactor(KGA100085).pdf http://studentsrepo.um.edu.my/8652/ |
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| Summary: | Over the last few decades, there was a substantial appeal on the growth of galliumnitride
(Ga-N) based alloy for high performance optoelectronic devices such as
blue/violet laser diode (LD), blue/white light emitting diode (LED) etc. In the recent
years, there have been revolutionary changes in semiconductor field. Growth method
for GaN-based film has been extensively explored, with success of thick film growth
using halide vapor-phase epitaxy (HVPE) technique The theoretical changes were
attributed from the experimental results where modeling was vastly used for the purpose
of design of equipment. This is because of the cost of the equipment and it is one of the
major burdens in semiconductor processing. In conjunction with reactor design, several
studies have focused on the simulation for optimizing the flow pattern to produce
uniformity in the system. To address these issues, a new development called metal
organic halide vapor phase epitaxy (MOHVPE) reactor has been proposed in this study.
The model is conjugated with comprehensive detailed simulation for horizontal tube
reaction chamber by using computerized software. The development consists of 5 inlet
nozzles with dimension of 54 cm long. The numerical study of horizontal MOHVPE
growth shows dependence on temperature and species flow rates. The inlet area is set to
room temperature while the whole chamber is set in the temperature range from 1273 K
to 1473 K. Improvements of growth process reactor geometry aim that the velocity gas
efficiency, temperature distribution stabilization and uniformity control flow pattern
between the substrate holders are discussed. It is seen that the flow pattern is influenced
by the temperature distribution and geometry of the chamber. The numerical study of
horizontal MOHVPE growth shows a function of temperature and species flow rates has
been performed with specific condition to find the ideal position of the substrate for
growth process in future.
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