Probing technique for energy distribution of positive charges in gate dielectrics and its application to lifetime prediction / Sharifah Fatmadiana Wan Muhamad Hatta

• Main Author: Sharifah Fatmadiana , Wan Muhamad Hatta
• Format: Thesis
• Published: 2013
• Subjects: T Technology (General); TJ Mechanical engineering and machinery
• Online Access: http://studentsrepo.um.edu.my/8287/5/Thesis_SharifahFatmadiana_Dec_2013.pdf; http://studentsrepo.um.edu.my/8287/

The continuous reduction of the dimensions of CMOS devices has increased the negative bias temperature instability (NBTI) of pMOSFETs to such a level that it is limiting their lifetime. This increase of NBTI is caused mainly by three factors: an increase of nitrogen concentration in gate dielectric,...