Dual-band Doherty power amplifier with the improvement of reactance compensation technique for LTE frequency operations / Yu Li Ming
A dual-band selection of Doherty power amplifier employing a Reactance Compensation Technique (RCT) with Gallium Nitride High-Electron-Mobility-Transistor (GaN HEMT) technology is presented. In this dissertation, the focus has been given to the design power amplifier in Doherty configuration, where...
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| Format: | Thesis |
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2021
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| Online Access: | http://studentsrepo.um.edu.my/13209/1/Yu_Li_Ming.jpg http://studentsrepo.um.edu.my/13209/8/li_ming.pdf http://studentsrepo.um.edu.my/13209/ |
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