Modeling and simulation of metal organic halide vapor phase epitaxy (MOHVPE) growth chamber
Over the last few decades, there was a substantial appeal on the growth of gallium-nitride (Ga-N) based alloy for high performance optoelectronic devices such as blue/violet laser diode, blue/white light emitting diode etc. In the recent years, there have been revolutionary changes in semicondu...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Springer Verlag (Germany)
2014
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/9781/1/00011485_103123.pdf http://eprints.um.edu.my/9781/ https://doi.org/10.1007/s00542-013-2046-y |
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| Summary: | Over the last few decades, there was a substantial
appeal on the growth of gallium-nitride (Ga-N) based
alloy for high performance optoelectronic devices such as
blue/violet laser diode, blue/white light emitting diode etc.
In the recent years, there have been revolutionary changes
in semiconductor field. Growth method for GaN-based film
has been extensively explored, with success of thick film
growth using halide vapor-phase epitaxy technique. The
theoretical changes were attributed from the experimental
results where modeling was vastly used for the purpose
of design of equipment. This is because of the cost of the
equipment and it is one of the major burdens in semiconductor
processing. This process constitutes an important
technology for manufacturing thin solid film in the semiconductor
industry. To address these issues, a new development
called metal organic halide vapor phase epitaxy
(MOHVPE) reactor has been proposed in this study. Modeling
with five inlet nozzles with 54 cm long is designed by
design software. The numerical study of horizontal MOHVPE
growth shows dependence on temperature and species
flow rates. The inlet area is set to room temperature
while the whole chamber is set in the temperature range
from 1,273 to 1,473 K. Growth process reactor geometry
that involved with temperature distribution stabilization
and uniformity control flow pattern between the substrate
holder are discussed. It is seen that the flow pattern is influenced more by the temperature distribution and
geometry of the chamber. The numerical study of horizontal
MOHVPE growth shows a function of temperature and
species flow rates has been performed with specific condition to find the ideal position of the substrate for growth process in future. |
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