Current-Voltage Characterization on Au-DNA-Au Junctions under the Influence of Magnetic Field
We utilized Deoxyribonucleic acid (DNA) strands immobilized between a metal gap and its behavior was investigated. The DNA strands were initially prepared using the PCR method while gaps of 10.00 μm lengths were created on gold layer deposited onto silicon substrate. Once immobilized, current-volta...
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my.um.eprints.56722019-12-18T08:04:26Z http://eprints.um.edu.my/5672/ Current-Voltage Characterization on Au-DNA-Au Junctions under the Influence of Magnetic Field Mahmoudy Khatir, N. Banihashemian, S.M. Periasamy, V. Abd Majid, Wan Haliza Abdul Rahman, S. QC Physics We utilized Deoxyribonucleic acid (DNA) strands immobilized between a metal gap and its behavior was investigated. The DNA strands were initially prepared using the PCR method while gaps of 10.00 μm lengths were created on gold layer deposited onto silicon substrate. Once immobilized, current-voltage characterization was carried out on the Au-DNA-Au structure fabricated under the presence and absence of magnetic field. Experimental results clearly highlight the behavior of the DNA strands similar to semiconductor materials. An exponential decrease observed in the current in presence of external magnetic field suggests possible future application as a magnetic sensor. 2012 Article PeerReviewed Mahmoudy Khatir, N. and Banihashemian, S.M. and Periasamy, V. and Abd Majid, Wan Haliza and Abdul Rahman, S. (2012) Current-Voltage Characterization on Au-DNA-Au Junctions under the Influence of Magnetic Field. Advanced Materials Research, 535. pp. 1350-1353. ISSN 3037854464 10.4028/www.scientific.net/AMR.535-537.1350 |
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We utilized Deoxyribonucleic acid (DNA) strands immobilized between a metal gap and its behavior was investigated. The DNA strands were initially prepared using the PCR method while gaps of 10.00 μm lengths were created on gold layer deposited onto silicon substrate. Once immobilized, current-voltage characterization was carried out on the Au-DNA-Au structure fabricated under the presence and absence of magnetic field. Experimental results clearly highlight the behavior of the DNA strands similar to semiconductor materials. An exponential decrease observed in the current in presence of external magnetic field suggests possible future application as a magnetic sensor. |
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Article |
author |
Mahmoudy Khatir, N. Banihashemian, S.M. Periasamy, V. Abd Majid, Wan Haliza Abdul Rahman, S. |
author_facet |
Mahmoudy Khatir, N. Banihashemian, S.M. Periasamy, V. Abd Majid, Wan Haliza Abdul Rahman, S. |
author_sort |
Mahmoudy Khatir, N. |
title |
Current-Voltage Characterization on Au-DNA-Au Junctions under the Influence of Magnetic Field |
title_short |
Current-Voltage Characterization on Au-DNA-Au Junctions under the Influence of Magnetic Field |
title_full |
Current-Voltage Characterization on Au-DNA-Au Junctions under the Influence of Magnetic Field |
title_fullStr |
Current-Voltage Characterization on Au-DNA-Au Junctions under the Influence of Magnetic Field |
title_full_unstemmed |
Current-Voltage Characterization on Au-DNA-Au Junctions under the Influence of Magnetic Field |
title_sort |
current-voltage characterization on au-dna-au junctions under the influence of magnetic field |
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2012 |
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http://eprints.um.edu.my/5672/ |
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1654960612503977984 |
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13.159267 |