Review-gate oxide thin films based on silicon carbide

• Main Authors: Odesanya, Kazeem Olabisi, Ahmad, Roslina, Andriyana, Andri, Bingol, Sedat, Wong, Yew Hoong
• Format: Article
• Published: Electrochemical Soc Inc 2022
• Subjects: TJ Mechanical engineering and machinery
• Online Access: http://eprints.um.edu.my/41567/

A comprehensive review of the features of silicon carbide (SiC) and various methods of deposition of gate oxides are presented in this report. The SiC material, which is mostly employed as base component in metal oxide semiconductor field effect transistors (MOSFETs) is very promising; for its high...