Fabrication of DNA/NiSi NWs and Ag NPs-NiSi NWs-based Schottky diodes for DNA detection with fast response time

• Main Authors: Nazarudin, Nur Fatin Farhanah binti, Rizan, Nastaran, Talik, Noor Azrina, Periasamy, Vengadesh, Nakajima, Hideki, Rahman, Saadah Abdul, Goh, Boon Tong
• Format: Article
• Published: Springer 2021
• Subjects: QC Physics; TA Engineering (General). Civil engineering (General)
• Online Access: http://eprints.um.edu.my/28739/

In this study, we fabricated deoxyribonucleic acid/nickel silicide nanowires (DNA/NiSi NWs) and DNA-silver nanoparticles decorated NiSi NWs (DNA/Ag NPs-NiSi NWs) Schottky diodes and generated current-voltage (I-V) measurements with response time of 0.08-40 min at room temperature. The results demonstrate significant morphological changes towards both NiSi NWs and Ag NPs-NiSi NWs back contact, attributing to the presence of DNA, which subsequently affected the optical properties of the NWs. On the other hand, the utilisation of Ag NPs decorated NiSi NWs as the back contact yielded a relatively significant Raman spectral fingerprint with an enhanced Raman scattering factor of 10(18) when integrated with DNA due to its localised surface plasmon resonance (LSPR) effect in the visible region. The electrical properties for both NWs reacted to DNA against reaction time were calculated and DNA/Ag NPs-NiSi NWs showed better conductivity. The rectifying behaviour of DNA is reflected in the I-V profiles of the hybrid heterostructure DNA/Ag NPs-NiSi NWs diode. The fabricated device demonstrated rectifying behaviours with the turn-on voltage of 0.3 V, ideality factor of 1.4, reverse saturation current of 3.14 x 10(-18) A/cm(2), and series resistance of 22.47 k omega. Additionally, the high rectification ratio of 789013.30 demonstrated the higher sensitivity of Ag NPs-NiSi NWs-based Schottky diodes towards DNA than the NiSi NWs diode.