Analysis of the eight parameter variation of the resonant tunneling diode (RTD) in the rapid thermal annealing process with resistance compensation effect

• Main Authors: Zhao, Fan, Wang, Yidian, Guo, Weilian, Cong, Jia, Tee, Clarence Augustine Teck Huo, Song, Le, Zheng, Yelong
• Format: Article
• Published: American Institute of Physics 2020
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.um.edu.my/24560/; https://doi.org/10.1063/1.5133899

The rapid thermal annealing process is a key technology to control the parameters of the resonant tunneling diode (RTD) and to achieve high performance for the device. In this paper, the rapid thermal annealing process on the planar RTD has been investigated experimentally. In the experiment, the an...