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A novel nanoporous silicon prepared using electrochemical deposition technique for light emitting diode applications

The electroluminescence (EL) studies on the aluminum-doped nanoporous silicon (NPSi:Al) have been conducted. Nanoporous silicon (NPSi) layers have been prepared by anodically etching the unpolished p-type Si[100] wafer with surface resistivity of 4-8 Ωcm-1 in hydrofluoric solution at 1:1 ratio of et...

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Main Authors: Abdullah, Saifollah, Rusop, Mohamad, Muhamad, Muhamad Rasat
Format: Article
Published: World Scientific Publishing 2006
Subjects:
Q Science (General)
QC Physics
Online Access:http://eprints.um.edu.my/24481/
https://doi.org/10.1142/S0218625X06008517
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spelling my.um.eprints.244812020-05-29T04:08:16Z http://eprints.um.edu.my/24481/ A novel nanoporous silicon prepared using electrochemical deposition technique for light emitting diode applications Abdullah, Saifollah Rusop, Mohamad Muhamad, Muhamad Rasat Q Science (General) QC Physics The electroluminescence (EL) studies on the aluminum-doped nanoporous silicon (NPSi:Al) have been conducted. Nanoporous silicon (NPSi) layers have been prepared by anodically etching the unpolished p-type Si[100] wafer with surface resistivity of 4-8 Ωcm-1 in hydrofluoric solution at 1:1 ratio of ethanol. Aluminum (Al) was doped on NPSi using cathodic electrodeposition composed of aluminum chloride (AlCl3) and ethanol electrolyte. A diode structure has been fabricated comprising a semi-transparent Au/NPSi:Al/p-Si/Al ohmic contact electrode showing rectification on a forward bias I-V curve. EL from NPSi and NPSi:Al/p-Si has also been observed using the diode structure. The NPSi:Al/p-Si device shows increasing EL quantum efficiency at about 30%, and blue-shift EL spectra are observed. Possible reasons for the enhancement will be discussed. © World Scientific Publishing Company. World Scientific Publishing 2006 Article PeerReviewed Abdullah, Saifollah and Rusop, Mohamad and Muhamad, Muhamad Rasat (2006) A novel nanoporous silicon prepared using electrochemical deposition technique for light emitting diode applications. Surface Review and Letters, 13 (05). pp. 573-576. ISSN 0218-625X https://doi.org/10.1142/S0218625X06008517 doi:10.1142/S0218625X06008517
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic Q Science (General)
QC Physics
spellingShingle Q Science (General)
QC Physics
Abdullah, Saifollah
Rusop, Mohamad
Muhamad, Muhamad Rasat
A novel nanoporous silicon prepared using electrochemical deposition technique for light emitting diode applications
description The electroluminescence (EL) studies on the aluminum-doped nanoporous silicon (NPSi:Al) have been conducted. Nanoporous silicon (NPSi) layers have been prepared by anodically etching the unpolished p-type Si[100] wafer with surface resistivity of 4-8 Ωcm-1 in hydrofluoric solution at 1:1 ratio of ethanol. Aluminum (Al) was doped on NPSi using cathodic electrodeposition composed of aluminum chloride (AlCl3) and ethanol electrolyte. A diode structure has been fabricated comprising a semi-transparent Au/NPSi:Al/p-Si/Al ohmic contact electrode showing rectification on a forward bias I-V curve. EL from NPSi and NPSi:Al/p-Si has also been observed using the diode structure. The NPSi:Al/p-Si device shows increasing EL quantum efficiency at about 30%, and blue-shift EL spectra are observed. Possible reasons for the enhancement will be discussed. © World Scientific Publishing Company.
format Article
author Abdullah, Saifollah
Rusop, Mohamad
Muhamad, Muhamad Rasat
author_facet Abdullah, Saifollah
Rusop, Mohamad
Muhamad, Muhamad Rasat
author_sort Abdullah, Saifollah
title A novel nanoporous silicon prepared using electrochemical deposition technique for light emitting diode applications
title_short A novel nanoporous silicon prepared using electrochemical deposition technique for light emitting diode applications
title_full A novel nanoporous silicon prepared using electrochemical deposition technique for light emitting diode applications
title_fullStr A novel nanoporous silicon prepared using electrochemical deposition technique for light emitting diode applications
title_full_unstemmed A novel nanoporous silicon prepared using electrochemical deposition technique for light emitting diode applications
title_sort novel nanoporous silicon prepared using electrochemical deposition technique for light emitting diode applications
publisher World Scientific Publishing
publishDate 2006
url http://eprints.um.edu.my/24481/
https://doi.org/10.1142/S0218625X06008517
_version_ 1669008004013359104
score 13.211869

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