Dual characteristics of molybdenum disulfide based PN heterojunction photodetector prepared via drop-cast technique

A p-silicon/molybdenum disulfide (p-Si/MoS2) p-n heterojunction photodetector (PD) is proposed and fabricated using the drop-casting technique. The composition of elements in the localized surface morphology enables for excellent photoconduction under 380 nm illumination at various ultraviolet (UV)...

Full description

Saved in:
Bibliographic Details
Main Authors: Ahmad, Harith, Thandavan, Tamil Many K., Thambiratnam, Kavintheran
Format: Article
Published: Elsevier 2019
Subjects:
Online Access:http://eprints.um.edu.my/24334/
https://doi.org/10.1016/j.ijleo.2019.05.033
Tags: Add Tag
No Tags, Be the first to tag this record!
Be the first to leave a comment!
You must be logged in first