Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC

• Main Authors: Zhao, Feng, Amnuayphol, Oliver, Cheong, Kuan Yew, Wong, Yew Hoong, Jiang, Jheng-Yi, Huang, Chih-Fang
• Format: Article
• Published: Elsevier 2019
• Subjects: TJ Mechanical engineering and machinery; TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.um.edu.my/22899/; https://doi.org/10.1016/j.matlet.2019.03.009

In this paper, the effect of post deposition annealing (PDA) on the chemical, structural, and electrical properties of the high-k Y 2 O 3 /Al 2 O 3 stacking dielectric on p-type 4H-SiC were studied. High-k dielectric provides a physically thicker film with equivalent capacitance, therefore better ex...