Vertical Ge photodetector base on InP taper waveguide
In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the mon...
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my.um.eprints.224872019-09-23T06:37:48Z http://eprints.um.edu.my/22487/ Vertical Ge photodetector base on InP taper waveguide Amiri, Iraj Sadegh Ariannejad, Mohammad Mahdi Azzuhri, Saaidal Razalli Anwar, Toni Kouhdaragh, Vahid Yupapin, Preecha Promphan QA75 Electronic computers. Computer science In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition. Elsevier 2018 Article PeerReviewed Amiri, Iraj Sadegh and Ariannejad, Mohammad Mahdi and Azzuhri, Saaidal Razalli and Anwar, Toni and Kouhdaragh, Vahid and Yupapin, Preecha Promphan (2018) Vertical Ge photodetector base on InP taper waveguide. Results in Physics, 9. pp. 576-579. ISSN 2211-3797 https://doi.org/10.1016/j.rinp.2018.03.014 doi:10.1016/j.rinp.2018.03.014 |
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QA75 Electronic computers. Computer science Amiri, Iraj Sadegh Ariannejad, Mohammad Mahdi Azzuhri, Saaidal Razalli Anwar, Toni Kouhdaragh, Vahid Yupapin, Preecha Promphan Vertical Ge photodetector base on InP taper waveguide |
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In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition. |
format |
Article |
author |
Amiri, Iraj Sadegh Ariannejad, Mohammad Mahdi Azzuhri, Saaidal Razalli Anwar, Toni Kouhdaragh, Vahid Yupapin, Preecha Promphan |
author_facet |
Amiri, Iraj Sadegh Ariannejad, Mohammad Mahdi Azzuhri, Saaidal Razalli Anwar, Toni Kouhdaragh, Vahid Yupapin, Preecha Promphan |
author_sort |
Amiri, Iraj Sadegh |
title |
Vertical Ge photodetector base on InP taper waveguide |
title_short |
Vertical Ge photodetector base on InP taper waveguide |
title_full |
Vertical Ge photodetector base on InP taper waveguide |
title_fullStr |
Vertical Ge photodetector base on InP taper waveguide |
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Vertical Ge photodetector base on InP taper waveguide |
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vertical ge photodetector base on inp taper waveguide |
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Elsevier |
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2018 |
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http://eprints.um.edu.my/22487/ https://doi.org/10.1016/j.rinp.2018.03.014 |
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1646210255441362944 |
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13.159267 |