Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN
We report the effect of 40 pairs of periodic AlN/GaN multilayers on the a-plane undoped-gallium nitride (ud-GaN) grown on r-plane flat sapphire substrate via metal-organic chemical vapor deposition. The influence of the position of the periodic AlN/GaN multilayers was seen to enhance the crystalline...
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my.um.eprints.2182019-11-11T04:15:46Z http://eprints.um.edu.my/218/ Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN Kamarudzaman, Anas Shuhaimi, Ahmad Azman, Adreen Omar, Al-Zuhairi Supangat, Azzuliani Talik, Noor Azrina Q Science (General) QC Physics We report the effect of 40 pairs of periodic AlN/GaN multilayers on the a-plane undoped-gallium nitride (ud-GaN) grown on r-plane flat sapphire substrate via metal-organic chemical vapor deposition. The influence of the position of the periodic AlN/GaN multilayers was seen to enhance the crystalline quality and surface morphology of the a-plane ud-GaN. The surface morphology analysis via atomic force microscopy has shown that the surface roughness was as low as 1.01 nm upon the insertion of the 40 pairs of periodic AlN/GaN multilayers with an optimum position. The on- and off-axis x-ray ω-scan rocking curves illustrate the enhancement in crystalline quality with a reduction of the full width at half maximum from 0.34° to 0.25° along [0001] direction and 0.91°–0.47° along [1–100] direction. The grown a-plane GaN with periodic AlN/GaN multilayers was seen to exhibit different relaxation strain states at different position as seen from the Raman spectroscopy. Room-temperature photoluminescence spectra shows that the sample with optimum periodic AlN/GaN multilayers position exhibits the lowest yellow and blue luminescence band. © 2019 Elsevier 2020 Article PeerReviewed Kamarudzaman, Anas and Shuhaimi, Ahmad and Azman, Adreen and Omar, Al-Zuhairi and Supangat, Azzuliani and Talik, Noor Azrina (2020) Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN. Materials Science in Semiconductor Processing, 105. p. 104700. ISSN 1369-8001 https://doi.org/10.1016/j.mssp.2019.104700 doi:10.1016/j.mssp.2019.104700 |
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Q Science (General) QC Physics Kamarudzaman, Anas Shuhaimi, Ahmad Azman, Adreen Omar, Al-Zuhairi Supangat, Azzuliani Talik, Noor Azrina Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN |
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We report the effect of 40 pairs of periodic AlN/GaN multilayers on the a-plane undoped-gallium nitride (ud-GaN) grown on r-plane flat sapphire substrate via metal-organic chemical vapor deposition. The influence of the position of the periodic AlN/GaN multilayers was seen to enhance the crystalline quality and surface morphology of the a-plane ud-GaN. The surface morphology analysis via atomic force microscopy has shown that the surface roughness was as low as 1.01 nm upon the insertion of the 40 pairs of periodic AlN/GaN multilayers with an optimum position. The on- and off-axis x-ray ω-scan rocking curves illustrate the enhancement in crystalline quality with a reduction of the full width at half maximum from 0.34° to 0.25° along [0001] direction and 0.91°–0.47° along [1–100] direction. The grown a-plane GaN with periodic AlN/GaN multilayers was seen to exhibit different relaxation strain states at different position as seen from the Raman spectroscopy. Room-temperature photoluminescence spectra shows that the sample with optimum periodic AlN/GaN multilayers position exhibits the lowest yellow and blue luminescence band. © 2019 |
format |
Article |
author |
Kamarudzaman, Anas Shuhaimi, Ahmad Azman, Adreen Omar, Al-Zuhairi Supangat, Azzuliani Talik, Noor Azrina |
author_facet |
Kamarudzaman, Anas Shuhaimi, Ahmad Azman, Adreen Omar, Al-Zuhairi Supangat, Azzuliani Talik, Noor Azrina |
author_sort |
Kamarudzaman, Anas |
title |
Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN |
title_short |
Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN |
title_full |
Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN |
title_fullStr |
Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN |
title_full_unstemmed |
Positioning of periodic AlN/GaN multilayers: Effect on crystalline quality of a-plane GaN |
title_sort |
positioning of periodic aln/gan multilayers: effect on crystalline quality of a-plane gan |
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Elsevier |
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2020 |
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http://eprints.um.edu.my/218/ https://doi.org/10.1016/j.mssp.2019.104700 |
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13.18916 |