Design of Low Power Low Noise Amplifier using Gm-boosted Technique
This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that lea...
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my.um.eprints.212092019-05-09T08:23:41Z http://eprints.um.edu.my/21209/ Design of Low Power Low Noise Amplifier using Gm-boosted Technique Muhamad, Maizan Soin, Norhayati Ramiah, Harikrishnan TK Electrical engineering. Electronics Nuclear engineering This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that leads to a low power LNA are being discussed throughout this paper. Inductively degenerated and Gm-boosted topology are used to design the circuit. Design specifications are focused for 802.11b/g/n IEEE Wireless LAN Standards with center frequency of 2.4 GHz. The best low noise amplifier provides a power gain (S21) of 19.841 dB with noise figure (NF) of 1.497 dB using the gm-boosted topology while the best low power amplifier drawing 4.19mW power from a 1.2V voltage supply using the inductively degenerated. Institute of Advanced Engineering and Science 2018 Article PeerReviewed Muhamad, Maizan and Soin, Norhayati and Ramiah, Harikrishnan (2018) Design of Low Power Low Noise Amplifier using Gm-boosted Technique. Indonesian Journal of Electrical Engineering and Computer Science, 9 (3). pp. 685-689. ISSN 2502-4752 https://doi.org/10.11591/ijeecs.v9.i3.pp685-689 doi:10.11591/ijeecs.v9.i3.pp685-689 |
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TK Electrical engineering. Electronics Nuclear engineering Muhamad, Maizan Soin, Norhayati Ramiah, Harikrishnan Design of Low Power Low Noise Amplifier using Gm-boosted Technique |
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This paper presents the development of low noise amplifier integrated circuit using 130nm RFCMOS technology. The low noise amplifier function is to amplify extremely low noise amplifier without adding noise and preserving required signal to a noise ratio. A detailed methodology and analysis that leads to a low power LNA are being discussed throughout this paper. Inductively degenerated and Gm-boosted topology are used to design the circuit. Design specifications are focused for 802.11b/g/n IEEE Wireless LAN Standards with center frequency of 2.4 GHz. The best low noise amplifier provides a power gain (S21) of 19.841 dB with noise figure (NF) of 1.497 dB using the gm-boosted topology while the best low power amplifier drawing 4.19mW power from a 1.2V voltage supply using the inductively degenerated. |
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Article |
author |
Muhamad, Maizan Soin, Norhayati Ramiah, Harikrishnan |
author_facet |
Muhamad, Maizan Soin, Norhayati Ramiah, Harikrishnan |
author_sort |
Muhamad, Maizan |
title |
Design of Low Power Low Noise Amplifier using Gm-boosted Technique |
title_short |
Design of Low Power Low Noise Amplifier using Gm-boosted Technique |
title_full |
Design of Low Power Low Noise Amplifier using Gm-boosted Technique |
title_fullStr |
Design of Low Power Low Noise Amplifier using Gm-boosted Technique |
title_full_unstemmed |
Design of Low Power Low Noise Amplifier using Gm-boosted Technique |
title_sort |
design of low power low noise amplifier using gm-boosted technique |
publisher |
Institute of Advanced Engineering and Science |
publishDate |
2018 |
url |
http://eprints.um.edu.my/21209/ https://doi.org/10.11591/ijeecs.v9.i3.pp685-689 |
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