High gain S-band semiconductors optical amplifier with double-pass configuration

In this paper we propose and demonstrate a double-pass configuration of a compact high gain short wavelength (S-) band amplifier based on a semiconductor optical amplifier (SOA) operating from 1480 to 1520 nm. The proposed system provides gain value of 31.07 dB at a signal power level of -40 dBm tak...

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Main Authors: Ahmad, Harith, Zulkifli, Mohd Zamani, Hassan, Nor Ahya, Latif, Amirah Abdul, Harun, Sulaiman Wadi
Format: Article
Published: IOP Publishing 2011
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Online Access:http://eprints.um.edu.my/19856/
https://doi.org/10.1134/S1054660X11130019
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spelling my.um.eprints.198562019-04-08T06:20:16Z http://eprints.um.edu.my/19856/ High gain S-band semiconductors optical amplifier with double-pass configuration Ahmad, Harith Zulkifli, Mohd Zamani Hassan, Nor Ahya Latif, Amirah Abdul Harun, Sulaiman Wadi QC Physics TK Electrical engineering. Electronics Nuclear engineering In this paper we propose and demonstrate a double-pass configuration of a compact high gain short wavelength (S-) band amplifier based on a semiconductor optical amplifier (SOA) operating from 1480 to 1520 nm. The proposed system provides gain value of 31.07 dB at a signal power level of -40 dBm taken at 1500 nm. The measure gain profile of the double-pass configuration over different power levels and at different signal wavelengths outperforms that of the single-pass configuration. The noise figure of both configurations averages out to 10 dB. This system provides a good alternative as a high-gain and compact amplifier in the S-band region. IOP Publishing 2011 Article PeerReviewed Ahmad, Harith and Zulkifli, Mohd Zamani and Hassan, Nor Ahya and Latif, Amirah Abdul and Harun, Sulaiman Wadi (2011) High gain S-band semiconductors optical amplifier with double-pass configuration. Laser Physics, 21 (7). pp. 1208-1211. ISSN 1054-660X https://doi.org/10.1134/S1054660X11130019 doi:10.1134/S1054660X11130019
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
TK Electrical engineering. Electronics Nuclear engineering
spellingShingle QC Physics
TK Electrical engineering. Electronics Nuclear engineering
Ahmad, Harith
Zulkifli, Mohd Zamani
Hassan, Nor Ahya
Latif, Amirah Abdul
Harun, Sulaiman Wadi
High gain S-band semiconductors optical amplifier with double-pass configuration
description In this paper we propose and demonstrate a double-pass configuration of a compact high gain short wavelength (S-) band amplifier based on a semiconductor optical amplifier (SOA) operating from 1480 to 1520 nm. The proposed system provides gain value of 31.07 dB at a signal power level of -40 dBm taken at 1500 nm. The measure gain profile of the double-pass configuration over different power levels and at different signal wavelengths outperforms that of the single-pass configuration. The noise figure of both configurations averages out to 10 dB. This system provides a good alternative as a high-gain and compact amplifier in the S-band region.
format Article
author Ahmad, Harith
Zulkifli, Mohd Zamani
Hassan, Nor Ahya
Latif, Amirah Abdul
Harun, Sulaiman Wadi
author_facet Ahmad, Harith
Zulkifli, Mohd Zamani
Hassan, Nor Ahya
Latif, Amirah Abdul
Harun, Sulaiman Wadi
author_sort Ahmad, Harith
title High gain S-band semiconductors optical amplifier with double-pass configuration
title_short High gain S-band semiconductors optical amplifier with double-pass configuration
title_full High gain S-band semiconductors optical amplifier with double-pass configuration
title_fullStr High gain S-band semiconductors optical amplifier with double-pass configuration
title_full_unstemmed High gain S-band semiconductors optical amplifier with double-pass configuration
title_sort high gain s-band semiconductors optical amplifier with double-pass configuration
publisher IOP Publishing
publishDate 2011
url http://eprints.um.edu.my/19856/
https://doi.org/10.1134/S1054660X11130019
_version_ 1643691108399579136
score 13.159267