Mechanistic Characteristics of Surface Modified Organic Semiconductor g-C3N4 Nanotubes Alloyed with Titania

• المؤلفون الرئيسيون: Sim, L.C., Tan, W.H., Leong, K.H., Bashir, M.J.K., Saravanan, P., Surib, N.A.
• التنسيق: مقال
• اللغة: English
• منشور في: MDPI 2017
• الموضوعات: TA Engineering (General). Civil engineering (General); TD Environmental technology. Sanitary engineering
• الوصول للمادة أونلاين: http://eprints.um.edu.my/19022/1/Mechanistic_characteristics_of_surface_modified_organic_semiconductor_g-C3N4_nanotubes_alloyed_with_titania.pdf; http://eprints.um.edu.my/19022/; http://dx.doi.org/10.3390/ma10010028

The visible-light-driven photocatalytic degradation of Bisphenol A (BPA) was investigated using the binary composite of alkaline treated g-C3N4 (HT-g-C3N4) deposited over commercial TiO2 (Evonik Degussa GmbH, Essen, Germany). The existence and contribution of both TiO2 and g-C3N4/HT-g-C3N4 in the composite was confirmed through various analytical techniques including powder X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), field emission scanning electron microscopy (FESEM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible diffuse reflectance spectra (UV-vis-DRS), and photoluminescence (PL) analysis. The results showed that the titania in the binary composite exhibited both pure rutile and anatase phases. The morphological analysis indicated that the spongy "morel-like" structure of g-C3N4 turned to nanotube form after alkaline hydrothermal treatment and thereby decreased the specific surface area of HT-g-C3N4. The low surface area of HT-g-C3N4 dominates its promising optical property and effective charge transfer, resulting in a deprived degradation efficiency of BPA two times lower than pure g-C3N4 The binary composite of HT-g-C3N4/TiO2 exhibited excellent degradation efficiency of BPA with 2.16 times higher than the pure HT-g-C3N4. The enhanced photocatalytic activity was mainly due to the promising optical band gap structure with heterojunction interface, favorable specific surface area, and good charge separation.