Analytical band Monte Carlo analysis of electron transport in silicene

• المؤلفون الرئيسيون: Yeoh, K.H., Ong, D.S., Ooi, Chong Heng Raymond, Yong, T.K., Lim, S.K.
• التنسيق: مقال
• منشور في: Institute of Physics 2016
• الموضوعات: Q Science (General); QC Physics; TA Engineering (General). Civil engineering (General)
• الوصول للمادة أونلاين: http://eprints.um.edu.my/18787/; http://dx.doi.org/10.1088/0268-1242/31/6/065012

An analytical band Monte Carlo (AMC) with linear energy band dispersion has been developed to study the electron transport in suspended silicene and silicene on aluminium oxide (Al2O3) substrate. We have calibrated our model against the full band Monte Carlo (FMC) results by matching the velocity-field curve. Using this model, we discover that the collective effects of charge impurity scattering and surface optical phonon scattering can degrade the electron mobility down to about 400 cm2 V-1 s-1 and thereafter it is less sensitive to the changes of charge impurity in the substrate and surface optical phonon. We also found that further reduction of mobility to ∼100 cm2 V-1 s-1 as experimentally demonstrated by Tao et al (2015 Nat. Nanotechnol. 10 227) can only be explained by the renormalization of Fermi velocity due to interaction with Al2O3 substrate.