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Defects control for improved electrical properties in (Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 films by Co acceptor doping

(Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 (BSZT) films were grown on La0.5Sr0.5CoO3 buffered (001) SrTiO3 substrates by pulsed laser deposition. Effects of Co doping on electrical properties of the films were investigated to establish material design through defects control. The doping led to a significant improv...

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Main Authors: Miao, J., Chew, K.H., Jiang, Y.
Format: Article
Published: AIP Publishing 2011
Subjects:
Q Science (General)
Online Access:http://eprints.um.edu.my/14556/
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spelling my.um.eprints.145562020-02-03T03:31:15Z http://eprints.um.edu.my/14556/ Defects control for improved electrical properties in (Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 films by Co acceptor doping Miao, J. Chew, K.H. Jiang, Y. Q Science (General) (Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 (BSZT) films were grown on La0.5Sr0.5CoO3 buffered (001) SrTiO3 substrates by pulsed laser deposition. Effects of Co doping on electrical properties of the films were investigated to establish material design through defects control. The doping led to a significant improvement in the electrical properties with reduction in leakage current and dielectric loss. In addition, the dielectric tunability and figure of merit were enhanced, implying that Co-doped BSZT films are promising materials for tunable microware applications. Our detail studies suggest that the improved electrical properties of Co-doped BSZT films are closely related to defect concentrations in the films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3666021] AIP Publishing 2011 Article PeerReviewed Miao, J. and Chew, K.H. and Jiang, Y. (2011) Defects control for improved electrical properties in (Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 films by Co acceptor doping. Applied Physics Letters, 99 (23). ISSN 0003-6951
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic Q Science (General)
spellingShingle Q Science (General)
Miao, J.
Chew, K.H.
Jiang, Y.
Defects control for improved electrical properties in (Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 films by Co acceptor doping
description (Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 (BSZT) films were grown on La0.5Sr0.5CoO3 buffered (001) SrTiO3 substrates by pulsed laser deposition. Effects of Co doping on electrical properties of the films were investigated to establish material design through defects control. The doping led to a significant improvement in the electrical properties with reduction in leakage current and dielectric loss. In addition, the dielectric tunability and figure of merit were enhanced, implying that Co-doped BSZT films are promising materials for tunable microware applications. Our detail studies suggest that the improved electrical properties of Co-doped BSZT films are closely related to defect concentrations in the films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3666021]
format Article
author Miao, J.
Chew, K.H.
Jiang, Y.
author_facet Miao, J.
Chew, K.H.
Jiang, Y.
author_sort Miao, J.
title Defects control for improved electrical properties in (Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 films by Co acceptor doping
title_short Defects control for improved electrical properties in (Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 films by Co acceptor doping
title_full Defects control for improved electrical properties in (Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 films by Co acceptor doping
title_fullStr Defects control for improved electrical properties in (Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 films by Co acceptor doping
title_full_unstemmed Defects control for improved electrical properties in (Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 films by Co acceptor doping
title_sort defects control for improved electrical properties in (ba0.8sr0.2)(zr0.2ti0.8)o-3 films by co acceptor doping
publisher AIP Publishing
publishDate 2011
url http://eprints.um.edu.my/14556/
_version_ 1657488179185319936
score 13.2014675

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