Fabrication of zinc oxide thin films using solution immersion method / Amir Hafiz Khairudin

Zinc oxide (ZnO) nanoparticles were successfully synthesized by solution immersion method. The zinc nitrate hexahydrate was use as a precursor, hexamethylenetetramine as a stabilizer and gold seeded was used as a function of catalyser. The zinc oxide thin films obtained were annealed at different te...

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Main Author: Khairudin, Amir Hafiz
Format: Student Project
Language:English
Published: 2014
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Online Access:https://ir.uitm.edu.my/id/eprint/83072/1/83072.PDF
https://ir.uitm.edu.my/id/eprint/83072/
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spelling my.uitm.ir.830722023-11-22T00:21:37Z https://ir.uitm.edu.my/id/eprint/83072/ Fabrication of zinc oxide thin films using solution immersion method / Amir Hafiz Khairudin Khairudin, Amir Hafiz Temperature Zinc oxide (ZnO) nanoparticles were successfully synthesized by solution immersion method. The zinc nitrate hexahydrate was use as a precursor, hexamethylenetetramine as a stabilizer and gold seeded was used as a function of catalyser. The zinc oxide thin films obtained were annealed at different temperatures (350°C, 400°C, 450°C and 500°C). The effect of annealing temperature on the crystal structure, optical and electrical properties of the ZnO nanoparticles were characterized using X-ray diffraction (XRD), UV-Vis spectrometry, photoluminescence spectrometry and I-V measurement. XRD results showed that all the peaks obtained were corresponding to the hexagonal wurtzite structure. Photoluminescence spectrometry showed two peaks which is high intensity at wavelength of range 375 nm - 425 nm and higher at 450 nm - 800 nm and this indicates clearly two emission bands corresponding to the band edge emission and defects related emission respectively. UV-Vis spectrometry graph obviously showed high absorbance at wavelength 280 nm - 350 nm which means that all the films are highly absorbance at ultraviolet region. Meanwhile, I-V measurement exhibits the highest slope at 500°C and then followed room temperature (RT), 350°C, 450°C and 400°C. The current at a given voltage for the films at 500°C higher than other annealed temperature. This indicates that the annealing temperature at 500°C increases the production of electron-hole pairs. 2014 Student Project NonPeerReviewed text en https://ir.uitm.edu.my/id/eprint/83072/1/83072.PDF Fabrication of zinc oxide thin films using solution immersion method / Amir Hafiz Khairudin. (2014) [Student Project] <http://terminalib.uitm.edu.my/83072.pdf> (Unpublished)
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic Temperature
spellingShingle Temperature
Khairudin, Amir Hafiz
Fabrication of zinc oxide thin films using solution immersion method / Amir Hafiz Khairudin
description Zinc oxide (ZnO) nanoparticles were successfully synthesized by solution immersion method. The zinc nitrate hexahydrate was use as a precursor, hexamethylenetetramine as a stabilizer and gold seeded was used as a function of catalyser. The zinc oxide thin films obtained were annealed at different temperatures (350°C, 400°C, 450°C and 500°C). The effect of annealing temperature on the crystal structure, optical and electrical properties of the ZnO nanoparticles were characterized using X-ray diffraction (XRD), UV-Vis spectrometry, photoluminescence spectrometry and I-V measurement. XRD results showed that all the peaks obtained were corresponding to the hexagonal wurtzite structure. Photoluminescence spectrometry showed two peaks which is high intensity at wavelength of range 375 nm - 425 nm and higher at 450 nm - 800 nm and this indicates clearly two emission bands corresponding to the band edge emission and defects related emission respectively. UV-Vis spectrometry graph obviously showed high absorbance at wavelength 280 nm - 350 nm which means that all the films are highly absorbance at ultraviolet region. Meanwhile, I-V measurement exhibits the highest slope at 500°C and then followed room temperature (RT), 350°C, 450°C and 400°C. The current at a given voltage for the films at 500°C higher than other annealed temperature. This indicates that the annealing temperature at 500°C increases the production of electron-hole pairs.
format Student Project
author Khairudin, Amir Hafiz
author_facet Khairudin, Amir Hafiz
author_sort Khairudin, Amir Hafiz
title Fabrication of zinc oxide thin films using solution immersion method / Amir Hafiz Khairudin
title_short Fabrication of zinc oxide thin films using solution immersion method / Amir Hafiz Khairudin
title_full Fabrication of zinc oxide thin films using solution immersion method / Amir Hafiz Khairudin
title_fullStr Fabrication of zinc oxide thin films using solution immersion method / Amir Hafiz Khairudin
title_full_unstemmed Fabrication of zinc oxide thin films using solution immersion method / Amir Hafiz Khairudin
title_sort fabrication of zinc oxide thin films using solution immersion method / amir hafiz khairudin
publishDate 2014
url https://ir.uitm.edu.my/id/eprint/83072/1/83072.PDF
https://ir.uitm.edu.my/id/eprint/83072/
_version_ 1783882217126100992
score 13.214265